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首頁(yè) >BF11>規(guī)格書(shū)列表

型號(hào)	下載訂購(gòu)	功能描述	制造商上傳企業(yè)	LOGO
BF1108R	文件：9.37507 Mbytes Page：130 Pages	RF Manual 16th edition General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p 文件：9.37507 Mbytes 頁(yè)數(shù)：130 Pages	恩XP	恩XP
BF1108W	文件：9.37507 Mbytes Page：130 Pages	RF Manual 16th edition General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p 文件：9.37507 Mbytes 頁(yè)數(shù)：130 Pages	恩XP	恩XP
BF1108WR	文件：9.37507 Mbytes Page：130 Pages	RF Manual 16th edition General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p 文件：9.37507 Mbytes 頁(yè)數(shù)：130 Pages	恩XP	恩XP
BF1109	文件：145.4 Kbytes Page：16 Pages	N-channel dual-gate MOS-FETs DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1109, BF1109R and BF1109WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package 文件：145.4 Kbytes 頁(yè)數(shù)：16 Pages	PHI PHI	PHI
BF1109	文件：371.77 Kbytes Page：15 Pages	N-channel dual-gate MOS-FETs FEATURES ? Short channel transistor with high forward transfer admittance to input capacitance ratio ? Low noise gain controlled amplifier up to 1 GHz ? Internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization. APPLICATIONS ? VHF and 文件：371.77 Kbytes 頁(yè)數(shù)：15 Pages	恩XP	恩XP
BF1109R	文件：371.77 Kbytes Page：15 Pages	N-channel dual-gate MOS-FETs FEATURES ? Short channel transistor with high forward transfer admittance to input capacitance ratio ? Low noise gain controlled amplifier up to 1 GHz ? Internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization. APPLICATIONS ? VHF and 文件：371.77 Kbytes 頁(yè)數(shù)：15 Pages	恩XP	恩XP
BF1109R	文件：145.4 Kbytes Page：16 Pages	N-channel dual-gate MOS-FETs DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1109, BF1109R and BF1109WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package 文件：145.4 Kbytes 頁(yè)數(shù)：16 Pages	PHI PHI	PHI
BF1109WR	文件：371.77 Kbytes Page：15 Pages	N-channel dual-gate MOS-FETs FEATURES ? Short channel transistor with high forward transfer admittance to input capacitance ratio ? Low noise gain controlled amplifier up to 1 GHz ? Internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization. APPLICATIONS ? VHF and 文件：371.77 Kbytes 頁(yè)數(shù)：15 Pages	恩XP	恩XP
BF1109WR	文件：145.4 Kbytes Page：16 Pages	N-channel dual-gate MOS-FETs DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1109, BF1109R and BF1109WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package 文件：145.4 Kbytes 頁(yè)數(shù)：16 Pages	PHI PHI	PHI
BF1118	文件：9.37507 Mbytes Page：130 Pages	RF Manual 16th edition General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p 文件：9.37507 Mbytes 頁(yè)數(shù)：130 Pages	恩XP	恩XP

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晶體管資料

型號(hào)：
BF110
別名：
三極管、晶體管、晶體三極管
生產(chǎn)廠家：
制作材料：
Si-NPN
性質(zhì)：
視頻輸出（Vid）
封裝形式：
直插封裝
極限工作電壓：
160V
最大電流允許值：
0.04A
最大工作頻率：
150MHZ
引腳數(shù)：
3
可代換的型號(hào)：
BF257,BF258,BF259,BF336,BF657,BF658,BF659,2N5058,2N5059,3DA87C,
最大耗散功率：
0.75W
放大倍數(shù)：
圖片代號(hào)：
C-40
vtest：
160
htest：
150000000
atest：
0.04
wtest：
0.75

技術(shù)參數(shù)

Frequency(MHz)：
2400~2500
InsertionLoss(dB/max.)：
1.3

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市豪邁興電子有限公司	BF110	MOT/ST/PH	24+	CAN3	21322	公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫(kù)存!	詢價(jià)
千層芯半導(dǎo)體(深圳)有限公司	BF1100WR	恩XP	24+	原廠原封	1500	原裝現(xiàn)貨熱賣	詢價(jià)
深圳市利加科技有限公司	BF1100R	恩XP	16+	NA	8800	誠(chéng)信經(jīng)營(yíng)	詢價(jià)
芯有半導(dǎo)體（深圳）有限公司	BF1105WR	PHI	05+	原廠原裝	21051	只做全新原裝真實(shí)現(xiàn)貨供應(yīng)	詢價(jià)
深圳市弘為電子有限公司	BF1100WR	PHI	24+	SOT-343	2490	原裝現(xiàn)貨假一罰十	詢價(jià)
深圳市一線半導(dǎo)體有限公司	BF1101WR	恩XP	24+	SOT-343SOT-323-4	49200	新進(jìn)庫(kù)存/原裝	詢價(jià)
齊創(chuàng)科技(上海,北京,青島)有限公司	BF1100R	恩XP	23+	SOT-143	30000	原裝正品,假一罰十	詢價(jià)
深圳市凌旭科技有限公司	BF1109R	INFION	2016+	SOT143	3000	只做原裝,假一罰十,公司可開(kāi)17%增值稅發(fā)票!	詢價(jià)
深圳市鵬和科技有限公司	BF1108	恩XP	24+	SOT143	5000	全現(xiàn)原裝公司現(xiàn)貨	詢價(jià)
深圳市海天鴻電子科技有限公司	BF1102	恩XP	1728+	SOT363	7500	只做原裝進(jìn)口,假一罰十	詢價(jià)

更多BF11供應(yīng)商更新時(shí)間2026-1-18 14:03:00

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