NPN Silicon Planar High Voltage Transistors

DESCRIPTION These plastic encapsulated general purpose transistor* are designed for applications requiring high breakdown voltage and low capacitance. The E-line package is formed by Injection moulding a SILICONE plastic specially selected to provide a rugged one-piece encapsulation resistant to

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司

16.5 GHz fT Wideband NPN Chip

Description NPN transistor in unencapsulated chip form. It is primarily intended for use in RF wideband amplifiers, such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analyzers, etc. The transistor features low intermodulation distortion and high power gain; due to its very

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SS

Handheld Digital Multimeters

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BK

B&K Precision Corporation

Phase Control SCR 490 Amperes Average 2400 Volts

Description: Powerex Silicon Controlled Rectifers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying(di/namic) gate. Features: □ Low On-State Voltage □ High di/dt □ High dv/dt □ Hermetic Packaging □

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POWEREX