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          首頁 >BDV64>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          BDV64B

          DARLINGTONS 10 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS

          Complementary Silicon Plastic Power Darlingtons . . . for use as output devices in complementary general purpose amplifier applications. Features ? High DC Current Gain ? HFE = 1000 (min) @ 5 Adc ? Monolithic Construction with Built?in Base Emitter Shunt Resistors ? These are Pb?Free Devices*

          文件:105.38 Kbytes 頁數(shù):6 Pages

          ONSEMI

          安森美半導體

          BDV64B

          POWER TRANSISTORS(12A,125W)

          文件:170.48 Kbytes 頁數(shù):4 Pages

          MOSPEC

          統(tǒng)懋

          BDV64B

          Complementary Silicon Plastic Power Darlingtons

          Complementary Silicon Plastic Power Darlingtons . . . for use as output devices in complementary general purpose amplifier applications. Features ? High DC Current Gain HFE = 1000 (min) @ 5 Adc ? Monolithic Construction with Built?in Base Emitter Shunt Resistors

          文件:110.06 Kbytes 頁數(shù):6 Pages

          MOTOROLA

          摩托羅拉

          BDV64B

          isc Silicon PNP Darlington Power Transistor

          DESCRIPTION ·Collector Current -IC= -12A ·Collector-Emitter Saturation Voltage- : VCE(sat)= -2.0V(Max.)@ IC= -5A ·Complement to Type BDV65/A/B/C APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications

          文件:251.73 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          BDV64B

          Silicon PNP Darlington Power Transistor

          DESCRIPTION ? Collector Current -lc= -12A ? Collector-Emitter Saturation Voltage- : VCE(sat)=-2.0V(Max.)@ lc= -5A ? Complement to Type BDV65/A/B/C APPLICATIONS ? Designed for audio output stages and general amplifier and switching applications

          文件:131.54 Kbytes 頁數(shù):2 Pages

          NJSEMINew Jersey Semi-Conductor Products, Inc.

          新澤西半導體新澤西半導體公司

          BDV64B

          PNP SILICON POWER DARLINGTONS

          PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDV65, BDV65A, BDV65B and BDV65C ● 125 W at 25°C Case Temperature ● 12 A Continuous Collector Current ● Minimum hFE of 1000 at 4 V, 5 A

          文件:120.77 Kbytes 頁數(shù):6 Pages

          POINN

          BDV64C

          Silicon PNP Darlington Power Transistor

          DESCRIPTION ? Collector Current -lc= -12A ? Collector-Emitter Saturation Voltage- : VCE(sat)=-2.0V(Max.)@ lc= -5A ? Complement to Type BDV65/A/B/C APPLICATIONS ? Designed for audio output stages and general amplifier and switching applications

          文件:131.54 Kbytes 頁數(shù):2 Pages

          NJSEMINew Jersey Semi-Conductor Products, Inc.

          新澤西半導體新澤西半導體公司

          BDV64C

          PNP SILICON POWER DARLINGTONS

          PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDV65, BDV65A, BDV65B and BDV65C ● 125 W at 25°C Case Temperature ● 12 A Continuous Collector Current ● Minimum hFE of 1000 at 4 V, 5 A

          文件:120.77 Kbytes 頁數(shù):6 Pages

          POINN

          BDV64C

          isc Silicon PNP Darlington Power Transistor

          DESCRIPTION ·Collector Current -IC= -12A ·Collector-Emitter Saturation Voltage- : VCE(sat)= -2.0V(Max.)@ IC= -5A ·Complement to Type BDV65/A/B/C APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications

          文件:251.73 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          BDV64C

          PNP SILICON DARLINGTONS POWER TRANSISTORS

          PNP SILICON DARLINGTONS POWER TRANSISTORS They are silicon epitaxial base transistors mounted in TO-3PN. Theyare designed for audio output stages and general amplifier and switching applications. complementary is BDV65-A-B-C Compliance to RoHS.

          文件:77.75 Kbytes 頁數(shù):4 Pages

          COMSET

          晶體管資料

          • 型號:

            BDV64

          • 別名:

            三極管、晶體管、晶體三極管

          • 生產(chǎn)廠家:

          • 制作材料:

            Si-P+Darl+Di

          • 性質:

            低頻或音頻放大 (LF)_功率放大 (L)

          • 封裝形式:

            直插封裝

          • 極限工作電壓:

            60V

          • 最大電流允許值:

            12A

          • 最大工作頻率:

            <1MHZ或未知

          • 引腳數(shù):

            3

          • 可代換的型號:

            BDV66,BDW84A,

          • 最大耗散功率:

            125W

          • 放大倍數(shù):

            β>1000

          • 圖片代號:

            B-62

          • vtest:

            60

          • htest:

            999900

          • atest:

            12

          • wtest:

            125

          產(chǎn)品屬性

          • 產(chǎn)品編號:

            BDV64

          • 制造商:

            Central Semiconductor Corp

          • 類別:

            分立半導體產(chǎn)品 > 晶體管 - 雙極性晶體管(BJT)- 單個

          • 包裝:

            散裝

          • 晶體管類型:

            PNP

          • 不同?Ic、Vce?時 DC 電流增益 (hFE)(最小值):

            1000 @ 5A,4V

          • 頻率 - 躍遷:

            60MHz

          • 安裝類型:

            通孔

          • 封裝/外殼:

            TO-218-3

          • 供應商器件封裝:

            TO-218

          • 描述:

            TRANS PNP 60V 12A TO218

          供應商型號品牌批號封裝庫存備注價格
          24+
          TO-3PN
          10000
          全新
          詢價
          PHI/ON
          23+
          TO-3P
          106310
          原廠授權代理,海外優(yōu)勢訂貨渠道。可提供大量庫存,詳
          詢價
          pi
          25+
          500000
          行業(yè)低價,代理渠道
          詢價
          23+
          20000
          正品原裝貨價格低
          詢價
          24+
          N/A
          78000
          一級代理-主營優(yōu)勢-實惠價格-不悔選擇
          詢價
          Central Semiconductor Corp
          25+
          TO-218-3
          9350
          獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
          詢價
          POWERINNOV
          24+/25+
          10
          原裝正品現(xiàn)貨庫存價優(yōu)
          詢價
          ST
          24+
          TO-3P
          15000
          原裝現(xiàn)貨熱賣
          詢價
          ST
          17+
          TO-3P
          6200
          詢價
          PHI
          16+
          TO-3P
          10000
          全新原裝現(xiàn)貨
          詢價
          更多BDV64供應商 更新時間2026-1-19 14:01:00
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