| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
BDT64C | SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit for audio output stages and general purpose amplifier and switching applications. TO-220 plastic enveloppe. NPN complements are BDT65,BDT65A,BDT65B AND BDT65C. 文件：487.41 Kbytes 頁數(shù)：15 Pages | PHI PHI | PHI | |
BDT64C | SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. PNP complements are BDT65-A-B-C Compliance to RoHS. 文件：109.99 Kbytes 頁數(shù)：5 Pages | COMSET | COMSET | |
BDT64C | isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -12A ·High DC Current Gain-hFE= 1000(Min)@ IC= -5A ·Complement to Type BDT65/A/B/C APPLICATIONS ·Designed for audio output stages and general purpose amplifier applications 文件：122.24 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | |
BDT64C | SEMICONDUCTORS 文件：2.43533 Mbytes 頁數(shù)：31 Pages | ETCList of Unclassifed Manufacturers 未分類制造商 | ETC | |
BDT64C | Silicon PNP Darlington Power Transistor 文件：137.99 Kbytes 頁數(shù)：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導體新澤西半導體公司 | NJSEMI | |
Silicon PNP Darlington Power Transistor DESCRIPTION ? Collector Current -IC= -12A ? High DC Current Gain-hFE= 1000(Min)@ IC= -5A ? Complement to Type BDT65F/AF/BF/CF APPLICATIONS ? Designed for audio output stages and general purpose amplifier applications 文件：136.45 Kbytes 頁數(shù)：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導體新澤西半導體公司 | NJSEMI | ||
isc Silicon PNP Darlington Power Transistor DESCRIPTION ? Collector Current -IC= -12A ? High DC Current Gain-hFE= 1000(Min)@ IC= -5A ? Complement to Type BDT65F/AF/BF/CF APPLICATIONS ? Designed for audio output stages and general purpose amplifier applications 文件：116.1 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit for audio output stages and general purpose amplifier and switching applications. TO-220 plastic enveloppe. NPN complements are BDT65,BDT65A,BDT65B AND BDT65C. 文件：487.41 Kbytes 頁數(shù)：15 Pages | PHI PHI | PHI | ||
BDT64C | Darlington BJT | NJS | NJS | |
BDT64C | Transistor | Comset | Comset |
晶體管資料
- 型號：
- 別名：
三極管、晶體管、晶體三極管
- 生產廠家：
- 制作材料：
Si-P+Darl+Di
- 性質：
低頻或音頻放大 （LF）_開關管 （S）_功率放大 （L
- 封裝形式：
直插封裝
- 極限工作電壓：
120V
- 最大電流允許值：
12A
- 最大工作頻率：
>10MHZ
- 引腳數(shù)：
3
- 可代換的型號：
BDV64C,BDX64C,ECG2344,
- 最大耗散功率：
125W
- 放大倍數(shù)：
β>1000
- 圖片代號：
B-89
- vtest：
120
- htest：
10000100
- atest：
12
- wtest：
125
詳細參數(shù)
- 型號：
BDT64C
- 制造商：
TT Electronics/ Semelab
- 功能描述：
DARLINGTON TRANSISTOR TO-220
- 功能描述：
DARLINGTON TRANSISTOR, TO-220
- 制造商：
Distributed By MCM
- 功能描述：
PNP, 120V,12A 125W Swo Transistor TO-220Ab Darlin
- 制造商：
SEMELAB
- 功能描述：
DARLINGTON TRANSISTOR, PNP, 120V, 12A, TO-220; Transistor
- Polarity：
PNP; Collector Emitter Voltage
- V(br)ceo：
-120V; Power Dissipation
- Pd：
125W; DC Collector
- Current：
-12A; DC Current Gain
- hFE：
750; No. of
- Pins：
3 ;RoHS
- Compliant：
Yes
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
25+ |
TO220F |
20300 |
ST/意法原裝特價BDT64C即刻詢購立享優(yōu)惠#長期有貨 |
詢價 | ||
24+ |
TO-220 |
568 |
詢價 | ||||
ST |
23+ |
TO-220 |
5000 |
原裝正品,假一罰十 |
詢價 | ||
ST |
25+ |
TO-220 |
6000 |
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 | ||
ST |
24+ |
TO-220 |
15000 |
原裝現(xiàn)貨熱賣 |
詢價 | ||
PHL/ST |
17+ |
TO-220 |
6200 |
詢價 | |||
ST |
16+ |
TO-220 |
10000 |
全新原裝現(xiàn)貨 |
詢價 | ||
ST |
24+ |
TO-220 |
5000 |
全現(xiàn)原裝公司現(xiàn)貨 |
詢價 | ||
ST |
25+ |
TO-220 |
2987 |
只售原裝自家現(xiàn)貨!誠信經營!歡迎來電! |
詢價 | ||
ST |
23+ |
TO-220 |
20000 |
專做原裝正品,假一罰百! |
詢價 |
相關規(guī)格書
更多相關庫存
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