SILICON DARLINGTON POWER TRANSISTORS

NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 envelope. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. PNP complements are BDT62-A-B-C Compliance to RoHS.

文件：111.05 Kbytes 頁數(shù)：5 Pages

COMSET

isc Silicon NPN Darlington Power Transistor

DESCRIPTION ·Collector Current -IC= 10A ·High DC Current Gain-hFE= 1000(Min)@ IC= 3A ·Complement to Type BDT62/A/B/C APPLICATIONS ·Designed for audio output stages and general purpose amplifier applications

文件：120.22 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

isc Silicon NPN Darlington Power Transistor

文件：268.59 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

Silicon NPN Darlington Power Transistor

文件：136.44 Kbytes 頁數(shù)：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司

Darlington BJT

NJS

Transistor

Comset

BDT63CX-MAG.R - 單晶體管 雙極, 達(dá)林頓, NPN, 115 V, 90 W, 10 A, 1000 hFE

The BDT63CX-MAG.R is a NPN silicon epitaxial power Darlington Transistor designed for audio output stages and general purpose applications. ·Monolithic Darlington circuit;

TT Electronics