isc Silicon PNP Darlington Power Transistors

DESCRIPTION ·DC Current Gain -hFE = 1000(Min)@ IC= -3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT62; -80V(Min)- BDT62A; -100V(Min)- BDT62B; -120V(Min)- BDT62C ·Complement to Type BDT63/A/B/C APPLICATIONS ·Designed for use in

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無錫固電

Silicon PNP Darlington Power Transistors

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司

BDT62C - 單晶體管 雙極, 達林頓, PNP, 120 V, 90 W, 10 A, 200 hFE

The BDT62C is a PNP silicon Power Transistor in monolithic Darlington circuit for audio output stages, general amplifier and switching applications. ·NPN complement BDT63C;

TT Electronics

Trans Darlington PNP 120V 10A

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