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          首頁(yè) >BDT60C>規(guī)格書(shū)列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          BDT60C

          Complement to Type BDT61/A/B/C

          DESCRIPTION ·DC Current Gain -hFE = 750(Min)@ IC= -1.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT60; -80V(Min)- BDT60A; -100V(Min)- BDT60B; -120V(Min)- BDT60C ·Complement to Type BDT61/A/B/C APPLICATIONS ·Designed for use in audi

          文件:199.63 Kbytes 頁(yè)數(shù):2 Pages

          ISC

          無(wú)錫固電

          BDT60C

          PNP SILICON POWER DARLINGTONS

          PNP SILICON POWER DARLINGTONS ? Designed for Complementary Use with BDT60, BDT60A, BDT60B and BDT60C ? 50 W at 25 °C Case Temperature ? 4 A Continuous Collector Current ? Minimum hFE of 750 at 1.5 V, 3 A

          文件:212.33 Kbytes 頁(yè)數(shù):2 Pages

          NJSEMINew Jersey Semi-Conductor Products, Inc.

          新澤西半導(dǎo)體新澤西半導(dǎo)體公司

          BDT60C

          PNP SILICON POWER DARLINGTONS

          PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDT61, BDT61A, BDT61B and BDT61C ● 50 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 750 at 1.5 V, 3 A

          文件:168.47 Kbytes 頁(yè)數(shù):6 Pages

          POINN

          BDT60C

          PNP SILICON POWER DARLINGTONS

          PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDT61, BDT61A, BDT61B and BDT61C ● 50 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 750 at 1.5 V, 3 A

          文件:719.45 Kbytes 頁(yè)數(shù):5 Pages

          TRSYS

          Transys Electronics

          BDT60C

          PNP SILICON POWER DARLINGTONS

          文件:119.03 Kbytes 頁(yè)數(shù):5 Pages

          BOURNS

          伯恩斯

          BDT60CF

          isc Silicon PNP Darlington Power Transistors

          DESCRIPTION · DC Current Gain -hFE = 750(Min)@ IC= -1.5A · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT60F; -80V(Min)- BDT60AF -100V(Min)- BDT60BF; -120V(Min)- BDT60CF · Complement to Type BDT61F/61AF/61BF/61CF APPLICATIONS · D

          文件:113.44 Kbytes 頁(yè)數(shù):2 Pages

          ISC

          無(wú)錫固電

          BDT60CF

          Silicon PNP Darlington Power Transistors

          DESCRIPTION ? DC Current Gain -hFE= 750(Min)@ IC=-1.5A ? Collector-Emitter Sustaining Voltage- : VCEo(sus) = -60V(Min)- BDT60F; -SOV(Min)- BDT60AF -100V(Min)- BDT60BF; -120V(Min)- BDT60CF ? Complement to Type BDT61F/

          文件:131.08 Kbytes 頁(yè)數(shù):2 Pages

          NJSEMINew Jersey Semi-Conductor Products, Inc.

          新澤西半導(dǎo)體新澤西半導(dǎo)體公司

          BDT60C

          PNP SILICON POWER DARLINGTONS

          Power Innovations

          BDT60C

          Trans Darlington PNP 120V 4A 3-Pin(3+Tab) TO-220

          NJS

          NJS

          BDT60C-S

          Package:TO-220-3;包裝:管件 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管(BJT)- 單個(gè) 描述:TRANS PNP DARL 120V 4A TO220

          Bourns Inc.

          Bourns Inc.

          晶體管資料

          • 型號(hào):

            BDT60C

          • 別名:

            三極管、晶體管、晶體三極管

          • 生產(chǎn)廠家:

          • 制作材料:

            Si-P+Darl+Di

          • 性質(zhì):

            低頻或音頻放大 (LF)_開(kāi)關(guān)管 (S)_功率放大 (L

          • 封裝形式:

            直插封裝

          • 極限工作電壓:

            120V

          • 最大電流允許值:

            4A

          • 最大工作頻率:

            >10MHZ

          • 引腳數(shù):

            3

          • 可代換的型號(hào):

            BDW54D,BDW64D,

          • 最大耗散功率:

            50W

          • 放大倍數(shù):

            β>750

          • 圖片代號(hào):

            B-89

          • vtest:

            120

          • htest:

            10000100

          • atest:

            4

          • wtest:

            50

          技術(shù)參數(shù)

          • Number of Elements per Chip:

            1

          • Minimum Operating Temperature:

            -65°C

          • Minimum DC Current Gain:

            [email protected]@3V

          • Maximum Operating Temperature:

            150°C

          • Maximum Emitter Base Voltage:

            5V

          • Maximum Continuous DC Collector Current:

            4A

          • Maximum Collector Emitter Voltage:

            120V

          • Maximum Collector Base Voltage:

            80V

          • Configuration:

            Single

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          更多BDT60C供應(yīng)商 更新時(shí)間2026-1-18 16:00:00
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