Switching Regulator ICs

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ROHM

羅姆

Switching Regulator ICs

文件：2.59432 Mbytes 頁(yè)數(shù)：30 Pages

ROHM

羅姆

FET內(nèi)置型 (5V耐壓) 系統(tǒng)開(kāi)關(guān)穩(wěn)壓器IC

數(shù)碼相機(jī)所必需的從電池高效率創(chuàng)建復(fù)數(shù)電壓的系統(tǒng)開(kāi)關(guān)穩(wěn)壓器IC。內(nèi)置功率FET和相位補(bǔ)償元件,最適合受空間限制的小型數(shù)碼相機(jī)。 ·7ch DC/DC converter, 2ch LDO embedded·CH1 Boost － Startup ch,Motor\n·CH2 LDO FET embedded Analog\n·CH3 Buck FET embedded Core\n·CH4 Buck-Boost FET embedded Digital\n·CH5 Boost/Buck － CMOS, Memory\n·CH6 Boost － LED\n·CH7 Boost FET embedded CCD\n·CH8 Reverse － CCD\n·CH9 LDO FET embedded Analog\n\n·Lo;

ROHM

羅姆

Power MOSFET(Vdss=-250V, Rds(on)=1.0ohm, Id=-4.1A)

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.Third Generation HEXFETs from International Rectifier provide the designer with the best combinati

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IRF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applicat

文件：850.4 Kbytes 頁(yè)數(shù)：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES ? Advanced process technology ? Dynamic dV/dt rating ? 150 °C operating temperature ? Fast switching ? P-channel ? Fully avalanche rated ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power MOSFETs from

文件：261.57 Kbytes 頁(yè)數(shù)：10 Pages

VISHAYVishay Siliconix

威世威世科技公司