SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS FEATURES ? Plastic package has Underwriters Laboratory Flammability Classification 94V-O ? For surface mounted applications ? Low profile package ? Built-in strain relief ? Low power loss, High efficiency ? High surge capacity ? F

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PANJIT

強茂

6.0 A SCHOTTKY BARRIER DIODE

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ZSELEC

淄博圣諾

isc Silicon PNP Darlington Power Transistor

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ISC

無錫固電

NPN Silicon Germanium RF Transistor

Product Brief The BFP650 is a high linearity wideband NPN bipolar RF transistor. The device is based on Infineon’s reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supports voltages up to VCEO = 4 V and currents up to IC = 150 mA. With

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INFINEON

英飛凌

NPN Silicon Germanium RF Transistor

NPN Silicon Germanium RF Transistor Preliminary data ? For high power amplifiers ? Ideal for low phase noise oscilators ? Maxim. available Gain Gma = 21 dB at 1.8 GHz Noise figure F = 0.9 dB at 1.8 GHz ? Gold metallization for high reliability ? 70 GHz fT- Silicon Germanium technology.

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INFINEON

英飛凌