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          首頁 >BD649>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          BD649

          NPN SILICON POWER DARLINGTONS

          NPN SILICON POWER DARLINGTONS ● RoHS compliant* ● Designed for Complementary Use with BD646, BD648, BD650 and BD652 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3 V, 3 A

          文件:105.89 Kbytes 頁數(shù):5 Pages

          BOURNS

          伯恩斯

          BD649

          NPN SILICON POWER DARLINGTONS

          NPN SILICON POWER DARLINGTONS ● RoHS compliant* ● Designed for Complementary Use with BD646, BD648, BD650 and BD652 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3 V, 3 A

          文件:90.32 Kbytes 頁數(shù):4 Pages

          BOURNS

          伯恩斯

          BD649

          SILICON DARLINGTON POWER TRANSISTORS

          SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. NPN complements are BD643, BD645, BD647

          文件:336.95 Kbytes 頁數(shù):5 Pages

          COMSET

          BD649

          isc Silicon NPN Darlington Power Transistor

          DESCRIPTION ? Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ? High DC Current Gain : hFE= 750(Min) @IC= 3A ? Low Saturation Voltage ? Complement to Type BD650 APPLICATIONS ? Designed for use as complementary AF push-pull output stage applications

          文件:108.25 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          BD649

          NPN Silicon Darlington Transistors

          Eplbase power darlington transistors (62.5W) BD 643, BD 645, BD647, and BD649 are monolithic NPN Silicon epibase power darlington transistors with diode and resistors in a TO 220 AB plastic package (TOP-66). The collectors of the two transistors are electrically connected to the metallic mounting

          文件:74.47 Kbytes 頁數(shù):2 Pages

          NJSEMINew Jersey Semi-Conductor Products, Inc.

          新澤西半導(dǎo)體新澤西半導(dǎo)體公司

          BD649

          NPN SILICON POWER DARLINGTONS

          PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD645, BD647, BD649 and BD651 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3 V , 3 A

          文件:115.8 Kbytes 頁數(shù):6 Pages

          POINN

          BD649

          Silicon NPN Power Transistors

          Silicon PNP Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type BD645/647/649/651 ·DARLINGTON APPLICATIONS ·For use in output stages in audio equipment ,general amplifier, and analogue switching applications

          文件:116.15 Kbytes 頁數(shù):4 Pages

          SAVANTIC

          BD649

          NPN SILICON DARLINGTON TRANSISTORS

          NPN SILICON DARLINGTON TRANSISTORS

          文件:125.89 Kbytes 頁數(shù):4 Pages

          SIEMENS

          西門子

          BD649

          PNP SILICON DARLINGTON TRANSISTORS

          NPN SILICON DARLINGTON TRANSISTORS

          文件:127.08 Kbytes 頁數(shù):4 Pages

          SIEMENS

          西門子

          BD649

          NPN SILICON POWER DARLINGTONS

          文件:105.89 Kbytes 頁數(shù):5 Pages

          BOURNS

          伯恩斯

          晶體管資料

          • 型號:

            BD649

          • 別名:

            三極管、晶體管、晶體三極管

          • 生產(chǎn)廠家:

          • 制作材料:

            Si-N+Darl+Di

          • 性質(zhì):

            低頻或音頻放大(LF)

          • 封裝形式:

            直插封裝

          • 極限工作電壓:

            120V

          • 最大電流允許值:

            8A

          • 最大工作頻率:

            <1MHZ或未知

          • 引腳數(shù):

            3

          • 可代換的型號:

            BD701,BD901,BDW73C,BDX33C,BDX53C,FD50B,

          • 最大耗散功率:

            62.5W

          • 放大倍數(shù):

          • 圖片代號:

            B-10

          • vtest:

            120

          • htest:

            999900

          • atest:

            8

          • wtest:

            62.5

          技術(shù)參數(shù)

          • Number of Elements per Chip:

            1

          • Minimum Operating Temperature:

            -65°C

          • Minimum DC Current Gain:

            750@3A@3V

          • Maximum Operating Temperature:

            150°C

          • Maximum Emitter Base Voltage:

            5V

          • Maximum Continuous DC Collector Current:

            8A

          • Maximum Collector Emitter Voltage:

            100V

          • Maximum Collector Base Voltage:

            120V

          • Maximum Base Emitter Saturation Voltage:

            3@50mA@5AV

          • Configuration:

            Single

          供應(yīng)商型號品牌批號封裝庫存備注價格
          ST/意法
          25+
          TO220F
          20300
          ST/意法原裝特價BD649即刻詢購立享優(yōu)惠#長期有貨
          詢價
          24+
          TO-220
          10000
          全新
          詢價
          ST
          17+
          TO-220
          6200
          詢價
          STMicroelectronics
          24+
          TO-220
          5000
          只做原裝公司現(xiàn)貨
          詢價
          恩XP
          23+
          TO-220
          11846
          一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
          詢價
          POWER
          23+
          TO-220
          25000
          專做原裝正品,假一罰百!
          詢價
          FAIRCHILD
          23+
          TO-220
          1
          詢價
          POWER
          2447
          TO-220
          100500
          一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
          詢價
          ST/意法
          23+
          TO-220
          50000
          全新原裝正品現(xiàn)貨,支持訂貨
          詢價
          恩XP
          2022+
          TO-220
          12888
          原廠代理 終端免費(fèi)提供樣品
          詢價
          更多BD649供應(yīng)商 更新時間2026-1-18 14:14:00
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