| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Silicon NPN Power Transistor DESCRIPTION ? Collector Current -lc= 25A ? Collector-Emitter Breakdown Voltage- : V(BR)CEO = 45V(Min)- BD249; 60V(Min)- BD249A 80V(Min)- BD249B; 100V(Min)- BD249C ? Complement to Type BD250/A/B/C APPLICATIONS ? Designed for use in general purpose power amplifie 文件：133.25 Kbytes 頁數(shù)：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導體新澤西半導體公司 | NJSEMI | ||
NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD250 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available 文件：93.76 Kbytes 頁數(shù)：6 Pages | POINN | POINN | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type BD250/A/B/C ·125 W at 25°C case temperature ·25 A continuous collector current 文件：145.26 Kbytes 頁數(shù)：3 Pages | SAVANTIC | SAVANTIC | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type BD250/A/B/C ·125 W at 25°C case temperature ·25 A continuous collector current 文件：145.26 Kbytes 頁數(shù)：3 Pages | SAVANTIC | SAVANTIC | ||
Silicon NPN Power Transistor DESCRIPTION ? Collector Current -lc= 25A ? Collector-Emitter Breakdown Voltage- : V(BR)CEO = 45V(Min)- BD249; 60V(Min)- BD249A 80V(Min)- BD249B; 100V(Min)- BD249C ? Complement to Type BD250/A/B/C APPLICATIONS ? Designed for use in general purpose power amplifie 文件：133.25 Kbytes 頁數(shù)：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導體新澤西半導體公司 | NJSEMI | ||
NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD250 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available 文件：93.76 Kbytes 頁數(shù)：6 Pages | POINN | POINN | ||
NPN SILICON POWER TRANSISTORS NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD250 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available 文件：109.16 Kbytes 頁數(shù)：5 Pages | BOURNS 伯恩斯 | BOURNS | ||
POWER TRANSISTORS(25A,125W) COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS 文件：131.99 Kbytes 頁數(shù)：3 Pages | MOSPEC 統(tǒng)懋 | MOSPEC | ||
Complementary Power Transistor Description: Designed for use in general purpose power amplifier and switching applications. Features: ? Collector-Emitter sustaining Voltage. VCEO(sus) = 100V (Min.) ? DC Current Gain hFE = 25 (Min.) at IC = 1.5A ? Current Gain Bandwidth Product fT = 3MHz (Min.) at IC = 1A 文件：614.08 Kbytes 頁數(shù)：4 Pages | MULTICOMP 易絡盟 | MULTICOMP | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type BD250/A/B/C ·125 W at 25°C case temperature ·25 A continuous collector current 文件：134.76 Kbytes 頁數(shù)：3 Pages | ISC 無錫固電 | ISC |
晶體管資料
- 型號：
- 別名：
三極管、晶體管、晶體三極管
- 生產廠家：
- 制作材料：
Si-NPN
- 性質：
低頻或音頻放大 （LF）_功率放大 （L）
- 封裝形式：
直插封裝
- 極限工作電壓：
45V
- 最大電流允許值：
25A
- 最大工作頻率：
<1MHZ或未知
- 引腳數(shù)：
3
- 可代換的型號：
BD257/45,TIP35,3DD71B,
- 最大耗散功率：
125W
- 放大倍數(shù)：
- 圖片代號：
B-62
- vtest：
45
- htest：
999900
- atest：
25
- wtest：
125
技術參數(shù)
- VCBO (V)：
55
- VCEO (V)：
45
- PD (W)：
125
- PACKAGE：
TO-3P
- NPN：
BD249
- PNP：
BD250
- HFE (Min/Max)：
10
- IC/VCE (A/V)：
15/4.0
- VCE(SAT) (V)：
1.8
- IC / IB (A/mA)：
15/1.5A
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
24+ |
TO-3PN |
10000 |
全新 |
詢價 | |||
ST |
24+ |
TO-218 |
15000 |
原裝現(xiàn)貨熱賣 |
詢價 | ||
ST |
24+ |
TO-218 |
5000 |
全現(xiàn)原裝公司現(xiàn)貨 |
詢價 | ||
TI |
23+ |
NA |
2898 |
專做原裝正品,假一罰百! |
詢價 | ||
ST/意法 |
23+ |
TO-218 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
ST |
22+ |
TO-3P |
6000 |
十年配單,只做原裝 |
詢價 | ||
ST |
25+ |
TO-3P |
12300 |
獨立分銷商 公司只做原裝 誠心經營 免費試樣正品保證 |
詢價 | ||
ST |
25+ |
TO-218 |
43 |
原裝正品,假一罰十! |
詢價 | ||
ROHM/羅姆 |
24+ |
SIP-12P |
6512 |
公司現(xiàn)貨庫存,支持實單 |
詢價 | ||
PECOR |
05+ |
原廠原裝 |
751 |
只做全新原裝真實現(xiàn)貨供應 |
詢價 |
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