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          首頁 >BD237D>規(guī)格書列表

          型號(hào)下載 訂購功能描述制造商 上傳企業(yè)LOGO

          BD237D

          TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

          Description Designed for medium power linear and switching applications.

          文件:218.44 Kbytes 頁數(shù):1 Pages

          DCCOM

          道全

          BD237D

          TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

          DC Components

          道全

          BD237G

          Plastic Medium Power Bipolar Transistors

          Plastic Medium Power Bipolar Transistors Designed for use in 5.0 to 10 W audio amplifiers and drivers utilizing complementary or quasi complementary circuits. Features ? DC Current Gain ? hFE = 40 (Min) @ IC = 0.15 Adc ? Epoxy Meets UL 94 V0 @ 0.125 in ? ESD Ratings: Human Body Model, 3B; >

          文件:68.89 Kbytes 頁數(shù):4 Pages

          ONSEMI

          安森美半導(dǎo)體

          BD237G

          Plastic Medium Power Bipolar Transistors

          Plastic Medium Power Bipolar Transistors Designed for use in 5.0 to 10 W audio amplifiers and drivers utilizing complementary or quasi complementary circuits. Features ? DC Current Gain ? hFE = 40 (Min) @ IC = 0.15 Adc ? Epoxy Meets UL 94 V0 @ 0.125 in ? ESD Ratings: Human Body Model, 3B; >

          文件:93.13 Kbytes 頁數(shù):5 Pages

          ONSEMI

          安森美半導(dǎo)體

          BD237NPN

          EPITAXIAL SILICON POWER TRANSISTORS

          EPITAXIAL SILICON POWER TRANSISTORS Intended for use in Medium Power Linear Switching Applications

          文件:492.4 Kbytes 頁數(shù):4 Pages

          CDIL

          詳細(xì)參數(shù)

          • 型號(hào):

            BD237D

          • 制造商:

            DCCOM

          • 制造商全稱:

            Dc Components

          • 功能描述:

            TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

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          更多BD237D供應(yīng)商 更新時(shí)間2026-1-18 11:09:00
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