絲?。?strong>BD233；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES Complement to BD234/BD236/BD238 respectively

文件：2.48834 Mbytes 頁數(shù)：5 Pages

DGNJDZ

南晶電子

絲?。?strong>BD233；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES Complement to BD234/BD236/BD238 respectively

文件：2.48834 Mbytes 頁數(shù)：5 Pages

DGNJDZ

南晶電子

絲?。?strong>BD233；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES Complement to BD234/BD236/BD238 respectively

文件：2.48834 Mbytes 頁數(shù)：5 Pages

DGNJDZ

南晶電子

絲?。?strong>BD233；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES Complement to BD234/BD236/BD238 respectively

文件：2.48834 Mbytes 頁數(shù)：5 Pages

DGNJDZ

南晶電子

Silicon NPN Power Transistor

DESCRIPTION ? DC Current Gain- : hFE=40(Min)@lc=0.15A ? Complement to Type BD234/236/238 APPLICATIONS ? Designedfor use in 5-10 watt audio amplifiers and drivers utilizing complementaryor quasi complementarycircuits.

文件：193.51 Kbytes 頁數(shù)：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體公司

Silicon NPN Power Transistors

DESCRIPTION ? With TO-126 package ? Complement to type BD234 /236 /238 APPLICATIONS ? For medium power linear and switching applications

文件：100.85 Kbytes 頁數(shù)：3 Pages

SAVANTIC

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) Collector current ICM: 2 A Collector-base voltage V(BR)CBO: BD233 : 45 V BD235: 60 V BD237: 100 V Operating and storage junction temperature range TJ : 150℃ Tstg: -65℃ to +150℃

文件：125.97 Kbytes 頁數(shù)：1 Pages

WINNERJOIN

永而佳

Silicon NPN transistor in a TO-126F Plastic Package.

Descriptions Silicon NPN transistor in a TO-126F Plastic Package. Features Complementary pair with BD234. Applications Medium power linear and switching applications.

文件：902.53 Kbytes 頁數(shù)：6 Pages

FOSHAN

藍箭電子

Plastic-Encapsulated Transistors

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) Collector current ICM: 2 A Collector-base voltage V(BR)CBO: BD233 : 45 V BD235: 60 V BD237: 100 V Operating and storage junction temperature range TJ : 150℃ Tstg: -65℃ to +150℃

文件：58.18 Kbytes 頁數(shù)：1 Pages

TEL

NPN Plastic-Encapsulate Transistors

Features ? Halogen free available upon request by adding suffix -HF ? Power Dissipation: PCM =1.25W, Ta=25°C ? Collector Current : IC=2A ? Complement to BD234/236/238 respectively ? Lead Free Finish/RoHS Compliant (Note1) (P Suffix designates RoHS Compliant. See ordering information) ? Epoxy

文件：283.29 Kbytes 頁數(shù)：3 Pages

MCC