絲?。?strong>BD139；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES High Current Complement To BD136, BD138 And BD140

文件：1.68264 Mbytes 頁數(shù)：4 Pages

DGNJDZ

南晶電子

絲?。?strong>BD139；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES High Current Complement To BD136, BD138 And BD140

文件：1.68264 Mbytes 頁數(shù)：4 Pages

DGNJDZ

南晶電子

絲印：BD139A；Package：TO-126；NPN POWER TRANSISTORS

? FEATURES High current (max.1.5A) Low voltage (max.80V)

文件：199.89 Kbytes 頁數(shù)：3 Pages

UTC

友順

絲印：BD139A；Package：TO-126；NPN POWER TRANSISTORS

? FEATURES High current (max.1.5A) Low voltage (max.80V)

文件：199.89 Kbytes 頁數(shù)：3 Pages

UTC

友順

絲?。?strong>BD139；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES High Current Complement To BD136, BD138 And BD140

文件：1.68264 Mbytes 頁數(shù)：4 Pages

DGNJDZ

南晶電子

絲?。?strong>BD139；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES High Current Complement To BD136, BD138 And BD140

文件：1.68264 Mbytes 頁數(shù)：4 Pages

DGNJDZ

南晶電子

絲?。?a target="_blank" title="Marking" href="/bd139a/marking.html">BD139A；Package：TO-126；NPN POWER TRANSISTORS

? FEATURES High current (max.1.5A) Low voltage (max.80V)

文件：199.89 Kbytes 頁數(shù)：3 Pages

UTC

友順

絲?。?a target="_blank" title="Marking" href="/bd139a/marking.html">BD139A；Package：TO-126；NPN POWER TRANSISTORS

? FEATURES High current (max.1.5A) Low voltage (max.80V)

文件：199.89 Kbytes 頁數(shù)：3 Pages

UTC

友順

SILICON NPN EPITAXIAL TYPE

FEATURES: . Designed for Complementary Use with BD136, BD138 and BD140.

文件：214.66 Kbytes 頁數(shù)：3 Pages

TOSHIBA

東芝

Plastic Medium Power Silicon NPN Transistor

Plastic Medium Power Silicon NPN Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. ? DC Current Gain — hFE = 40 (Min) @ IC = 0.15 Adc ? BD 135, 137, 139 are complementary with BD 136, 138, 140

文件：100.81 Kbytes 頁數(shù)：4 Pages

MOTOROLA

摩托羅拉