絲印：BCP53-16；Package：SOT223；PNP Silicon Epitaxial Planar Transistor

Features High Collector Current Low Collector-emitter Saturation Voltage

文件：1.31226 Mbytes 頁數(shù)：4 Pages

TECHPUBLIC

臺舟電子

絲?。?strong>BCP53-16；Package：SOT223；PNP Silicon Epitaxial Planar Transistor

Features High Collector Current Low Collector-emitter Saturation Voltage

文件：1.31303 Mbytes 頁數(shù)：4 Pages

TECHPUBLIC

臺舟電子

絲?。?strong>BCP53-16；Package：SOT223；PNP Silicon Epitaxial Planar Transistor

Features High Collector Current Low Collector-emitter Saturation Voltage

文件：1.31226 Mbytes 頁數(shù)：4 Pages

TECHPUBLIC

臺舟電子

絲印：BCP53/16；Package：SC-73；80 V, 1 A PNP medium power transistors

Features and benefits ? High current ? Three current gain selections ? High power dissipation capability ? Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061) ? Leadless very small SMD plastic package with medium power capability (SOT1061) ? AEC-Q101 qualified

文件：1.83457 Mbytes 頁數(shù)：22 Pages

NEXPERIA

安世

絲印：9110DW；Package：SOT-223；PNP Low Vce(sat) Transistor

Features ? Silicon PNP epitaxial type ? Low Vce(sat) -0.4V(max)@Ic/Ib= -500mA / -50mA ? High collector current capability ? Excellent DC current gain characteristics ? AEC-Q101 qualified ? Lead free in compliance with EU RoHS 2.0 ? Green molding compound as per IEC 61249 Standard ? NPN com

文件：396 Kbytes 頁數(shù)：6 Pages

PANJIT

強茂

絲印：P5310H；Package：SC-73；80 V, 1 A PNP medium power transistors

General description PNP medium power transistors in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. Features and benefits ■ High collector current capability IC and ICM ■ Three current gain selections ■ High power dissipation capability ■ High-temperature applicat

文件：1.27242 Mbytes 頁數(shù)：16 Pages

NEXPERIA

安世

絲?。?a target="_blank" title="Marking" href="/p5316h/marking.html">P5316H；Package：SOT223；80 V, 1 A PNP medium power transistors

Features and benefits ? High collector current capability IC and ICM ? Three current gain selections ? High power dissipation capability ? High-temperature applications up to 175 ?C ? AEC-Q101 qualified

文件：1.27175 Mbytes 頁數(shù)：16 Pages

NEXPERIA

安世

絲印：P5316H；Package：SOT223；80 V, 1 A PNP medium power transistors

1. General description PNP medium power transistors in a SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits ? High collector current capability IC and ICM ? Three current gain selections ? High power dissipation capability ? High-temperature applications

文件：275.29 Kbytes 頁數(shù)：14 Pages

NEXPERIA

安世

絲?。?a target="_blank" title="Marking" href="/p5316t/marking.html">P5316T；Package：SOT223；80 V, 1 A PNP medium power transistors

Features and benefits ? High collector current capability IC and ICM ? Three current gain selections ? High power dissipation capability ? AEC-Q101 qualified

文件：274 Kbytes 頁數(shù)：14 Pages

NEXPERIA

安世

PNP Silicon AF Transistors (For AF driver and output stages High collector current)

PNP Silicon AF Transistors ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BCP 54 … BCP 56 (NPN)

文件：140.02 Kbytes 頁數(shù)：5 Pages

SIEMENS

西門子