Plastic-Encapsulate MOSFETS

General Description The BCL3407DW uses advanced trench technology to provide excellent RDS(on) with low gate charge. This device is suitable for use as a load switch or in PWM applications.

文件：1.7084 Mbytes 頁數(shù)：5 Pages

GWSEMI

唯圣電子

P-Channel Enhancement Mode Power MOSFET

文件：221.42 Kbytes 頁數(shù)：6 Pages

BELLING

上海貝嶺

P-Channel 30V (D-S) 4A P-MOSFET

文件：106.33 Kbytes 頁數(shù)：5 Pages

BOOKLY

百力微電子

Dual P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -5.1A, RDS(ON) = 48m? @VGS = -10V. RDS(ON) = 65m? @VGS = -4.5V. RDS(ON) = 115m? @VGS = -2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired.

文件：232.11 Kbytes 頁數(shù)：4 Pages

CET

華瑞