絲?。?a target="_blank" title="Marking" href="/2e/marking.html">2E；Package：TSSOP6；65 V, 100 mA PNP/PNP general-purpose double transistor

Features and benefits ? Low collector capacitance ? Low collector-emitter saturation voltage ? Closely matched current gain ? Reduces number of components and board space ? No mutual interference between the transistors ? High-temperature applications up to 175 °C

文件：234.73 Kbytes 頁數(shù)：10 Pages

NEXPERIA

安世

絲印：2E；Package：TSSOP6；65 V, 100 mA PNP/PNP general-purpose double transistor

Features and benefits ? Low collector capacitance ? Low collector-emitter saturation voltage ? Closely matched current gain ? Reduces number of components and board space ? No mutual interference between the transistors ? High-temperature applications up to 175 °C ? Qualified according to A

文件：235.84 Kbytes 頁數(shù)：10 Pages

NEXPERIA

安世

65 V, 100 mA PNP/PNP general-purpose double transistor

PNP/PNP general-purpose double transistor in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.\n NPN/NPN complement: BC846BSH-Q\n NPN/PNP complement: BC846BPNH-Q ? Low collector capacitance\n? Low collector-emitter saturation voltage\n? Closely matched current gain\n? Reduces number of components and board space\n? No mutual interference between the transistors\n? High-temperature applications up to 175 °C\n? Qualified according to AEC-Q101 and recommended f;

Nexperia

安世

PNP general purpose transistors

DESCRIPTION PNP transistor in an SC-75 plastic package. NPN complements: BC846T and BC847T. FEATURES ? Low current (max. 100 mA) ? Low voltage (max. 65 V). APPLICATIONS ? General purpose switching and amplification especially in portable equipment.

文件：46.99 Kbytes 頁數(shù)：8 Pages

PHI

PHI

SURFACE MOUNT PNP SILICON TRANSISTOR

文件：350.66 Kbytes 頁數(shù)：2 Pages

CENTRAL