Plastic-Encapsulate MOSFETS

FEATURE TrenchFET Power MOSFET APPLICATION Load Switch for Portable Devices DC/DC Converter

文件：219.1 Kbytes 頁(yè)數(shù)：4 Pages

GWSEMI

唯圣電子

場(chǎng)效應(yīng)晶體管

CBI

創(chuàng)基電子

N-Channel 30-V(D-S) MOSFET

FEATURES ● P ower MOSFET ● 1 00 Rg Tested ● -CAR for automotive and other applications requiring unique site and control change requirements;AEC-Q101 qualified and PPAP capable.

文件：318.25 Kbytes 頁(yè)數(shù)：5 Pages

GWSEMI

唯圣電子

MMDS / ISM / S-Band Mixer

[Pacific Wireless] Description The C2306 is a flexible, high intercept, frequency conversion GaAs MMIC packaged in a 14 pin SOIC package. The MMIC is usable as an upconverter or downconverter mixer. Each subcircuit is brought out on separate pins to allow for custom filtering on the IF/RF

文件：71.35 Kbytes 頁(yè)數(shù)：4 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

MMDS / ISM / S-Band Mixer

[Pacific Wireless] Description The C2306 is a flexible, high intercept, frequency conversion GaAs MMIC packaged in a 14 pin SOIC package. The MMIC is usable as an upconverter or downconverter mixer. Each subcircuit is brought out on separate pins to allow for custom filtering on the IF/RF

文件：71.35 Kbytes 頁(yè)數(shù)：4 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V, 4.1A, RDS(ON) = 45mW @VGS = 4.5V. RDS(ON) = 55mW @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-23-T package. RoHS compliant. RDS(ON) = 110mW @VGS = 1.8V.

文件：667.9 Kbytes 頁(yè)數(shù)：5 Pages

CET-MOS

華瑞