| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
BB503 | Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier Features ? Build in Biasing Circuit; To reduce using parts cost & PC board space. ? Low noise; NF = 1.8 dB typ. at f = 900 MHz ? High gain; PG = 22 dB typ. at f = 900 MHz ? Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. ? Provide mini 文件:64.739 Kbytes 頁(yè)數(shù):13 Pages | HITACHIHitachi Semiconductor 日立日立公司 | HITACHI | |
BB503 | Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier Features ? Build in Biasing Circuit; To reduce using parts cost & PC board space. ? Low noise; NF = 1.8 dB typ. at f = 900 MHz ? High gain; PG = 22 dB typ. at f = 900 MHz ? Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. ? Provide mini 文件:64.66 Kbytes 頁(yè)數(shù):13 Pages | HITACHIHitachi Semiconductor 日立日立公司 | HITACHI | |
BB503 | Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier | HITACHI 日立 | HITACHI | |
Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier Features ? Build in Biasing Circuit; To reduce using parts cost & PC board space. ? Low noise; NF = 1.8 dB typ. at f = 900 MHz ? High gain; PG = 22 dB typ. at f = 900 MHz ? Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. ? Provide mini 文件:64.66 Kbytes 頁(yè)數(shù):13 Pages | HITACHIHitachi Semiconductor 日立日立公司 | HITACHI | ||
Built in Biasing Circuit MOS FET IC UHF RF Amplifier Features ? Built in Biasing Circuit; To reduce using parts cost & PC board space. ? Low noise; NF = 1.8 dB typ. at f = 900 MHz ? High gain; PG = 22 dB typ. at f = 900 MHz ? Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. ? Provide mini 文件:217.98 Kbytes 頁(yè)數(shù):11 Pages | RENESAS 瑞薩 | RENESAS | ||
Built in Biasing Circuit MOS FET IC UHF RF Amplifier Features ? Built in Biasing Circuit; To reduce using parts cost & PC board space. ? Low noise; NF = 1.8 dB typ. at f = 900 MHz ? High gain; PG = 22 dB typ. at f = 900 MHz ? Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. ? Provide mini 文件:217.98 Kbytes 頁(yè)數(shù):11 Pages | RENESAS 瑞薩 | RENESAS | ||
Built in Biasing Circuit MOS FET IC UHF RF Amplifier Features ? Built in Biasing Circuit; To reduce using parts cost & PC board space. ? Low noise; NF = 1.8 dB typ. at f = 900 MHz ? High gain; PG = 22 dB typ. at f = 900 MHz ? Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. ? Provide mini 文件:300.97 Kbytes 頁(yè)數(shù):11 Pages | RENESAS 瑞薩 | RENESAS | ||
Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier Features ? Build in Biasing Circuit; To reduce using parts cost & PC board space. ? Low noise; NF = 1.8 dB typ. at f = 900 MHz ? High gain; PG = 22 dB typ. at f = 900 MHz ? Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. ? Provide mini 文件:64.739 Kbytes 頁(yè)數(shù):13 Pages | HITACHIHitachi Semiconductor 日立日立公司 | HITACHI | ||
Built in Biasing Circuit MOS FET IC UHF RF Amplifier Features ? Built in Biasing Circuit; To reduce using parts cost & PC board space. ? Low noise; NF = 1.8 dB typ. at f = 900 MHz ? High gain; PG = 22 dB typ. at f = 900 MHz ? Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. ? Provide mini 文件:300.97 Kbytes 頁(yè)數(shù):11 Pages | RENESAS 瑞薩 | RENESAS | ||
Transistors>Amplifiers/MOSFETs | Renesas 瑞薩 | Renesas |
詳細(xì)參數(shù)
- 型號(hào):
BB503
- 制造商:
RENESAS
- 制造商全稱:
Renesas Technology Corp
- 功能描述:
Built in Biasing Circuit MOS FET IC UHF RF Amplifier
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞薩 |
25+ |
SOT-23 |
20300 |
RENESAS/瑞薩原裝特價(jià)BB503即刻詢購(gòu)立享優(yōu)惠#長(zhǎng)期有貨 |
詢價(jià) | ||
RENESAS/瑞薩 |
20+ |
SOT-23 |
120000 |
原裝正品 可含稅交易 |
詢價(jià) | ||
RENESAS/瑞薩 |
2025+ |
SOT-23 |
5000 |
原裝進(jìn)口價(jià)格優(yōu) 請(qǐng)找坤融電子! |
詢價(jià) | ||
NK/南科功率 |
2025+ |
SOT-23 |
986966 |
國(guó)產(chǎn) |
詢價(jià) | ||
RENESAS/瑞薩 |
2511 |
SOT-23 |
360000 |
電子元器件采購(gòu)降本30%!原廠直采,砍掉中間差價(jià) |
詢價(jià) | ||
RENESAS/瑞薩 |
22+ |
SOT-23 |
20000 |
只做原裝 |
詢價(jià) | ||
RENESAS |
25+ |
ZIP |
18000 |
原廠直接發(fā)貨進(jìn)口原裝 |
詢價(jià) | ||
renesas |
24+ |
SOT-343 |
2550 |
詢價(jià) | |||
HIT |
02+ |
SOT23 |
2200 |
全新原裝進(jìn)口自己庫(kù)存優(yōu)勢(shì) |
詢價(jià) | ||
RENESAS |
25+ |
MPAK-4 |
1076 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可 |
詢價(jià) |
相關(guān)規(guī)格書
更多- BB503MCS-TL
- BB504MDS
- BB515
- BB535E7904
- BB535E7904HTSA1
- BB545E7904
- BB545E7904HTSA1
- BB555
- BB555-02VH7902
- BB565-02V
- BB565H7902
- BB5X26-SB/2SC-LHS
- BB620
- BB639CE7904
- BB639CE7904HTSA1
- BB639E7904
- BB640
- BB640E6327
- BB644
- BB659
- BB659C-02V
- BB659H7902
- BB664-02V
- BB66402VH7902XTSA1
- BB669E7904HTSA1
- BB7
- BB729
- BB804W
- BB814
- BB814E6327GR1
- BB830
- BB831
- BB833E6327
- BB837E6327
- BB844E6327
- BB857
- BB914
- BBA00010667
- BB-BONE-000
- BB-BONE-BBBD-01
- BB-BONE-BRKT-01
- BB-BONE-DVID-02
- BB-BONE-MOTOR-02
- BB-BONE-WTHR-01
- BBC-1821
相關(guān)庫(kù)存
更多- BB504CDS-TL-E
- BB509
- BB535
- BB535E7904
- BB545
- BB545E7904
- BB5520URR
- BB555-02V
- BB565
- BB565-02VH7902
- BB5S30PP4M100
- BB619
- BB639
- BB639CE7904
- BB639E7904
- BB639E7904HTSA1
- BB640E6327
- BB640E6327HTSA1
- BB644E7904HTSA1
- BB659C
- BB659C-02VH7902
- BB664
- BB664-02VH7902
- BB669
- BB689
- BB721
- BB804
- BB811
- BB814E6327GR1
- BB814E6327GR1HTSA1
- BB830T
- BB833
- BB837E6327
- BB837E6327HTSA1
- BB844E6327
- BB85702VH7902XTSA1
- BB914E6327
- BB-BBLK-000
- BB-BONE-BATT-01
- BB-BONE-BBPR-01
- BB-BONE-DVID-01
- BB-BONE-MOTOR-01
- BB-BONE-NINJA-01
- BBC01
- BBC-1823

