Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Features ? Build in Biasing Circuit; To reduce using parts cost & PC board space. ? Low noise characteristics; (NF = 1.3 dB typ. at f = 200 MHz) ? Withstanding to ESD; Build in ESD absorbing diode . Withstand up to 200 V at C = 200 pF, Rs = 0 conditions.

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HITACHIHitachi Semiconductor

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Built in Biasing Circuit MOS FET IC VHF RF Amplifier

Features ? Built in Biasing Circuit; To reduce using parts cost & PC board space. ? Low noise characteristics; (NF = 1.3 dB typ. at f = 200 MHz) ? Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. ? Provide mini mold packag

文件：271.19 Kbytes 頁數(shù)：8 Pages

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Built in Biasing Circuit MOS FET IC VHF RF Amplifier

Features ? Built in Biasing Circuit; To reduce using parts cost & PC board space. ? Low noise characteristics; (NF = 1.3 dB typ. at f = 200 MHz) ? Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. ? Provide mini mold packag

文件：271.19 Kbytes 頁數(shù)：8 Pages

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Built in Biasing Circuit MOS FET IC VHF RF Amplifier

? Built in Biasing Circuit;\n?? To reduce using parts cost & PC board space.\n? Low noise characteristics;\n?? (NF = 1.3 dB typ. at f = 200 MHz)\n? Withstanding to ESD;\n?? Built in ESD absorbing diode.\n?? Withstand up to 200V at C=200pF, Rs=0 conditions.\n? Provide mini mold packages; CMPAK-4(SOT-;

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