Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Features ? Build in Biasing Circuit; To reduce using parts cost & PC board space. ? Low noise characteristics; (NF = 2.1 dB typ. at f = 900 MHz) ? Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. ? Provide mini mold packages; CMPAK-4(SOT-

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HITACHIHitachi Semiconductor

日立日立公司

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

HITACHI

日立

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Features ? Build in Biasing Circuit; To reduce using parts cost & PC board space. ? Low noise characteristics; (NF = 2.1 dB typ. at f = 900 MHz) ? Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. ? Provide mini mold packages; MPAK-4(SOT-1

文件：64.54 Kbytes 頁數(shù)：11 Pages

HITACHIHitachi Semiconductor

日立日立公司

BA/BC Series: 1.5 - 6.0 Watts Single and Dual Outputs

FEATURES ? Input π Filter ? Fully Regulated Outputs ? Industry Standard Pinouts ? 5, 12, 24, 28, and 48 VDC Inputs ? Ripple and Noise Less Than 50mVpp ? Input/Output Isolation

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ETCList of Unclassifed Manufacturers

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COMMON MODE CHOKE

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