Ultrafast silicon rectifier diodes

Forward Current: 0,2 A Reverse Voltage: 50 to 300 V Features ● Max. solder temperature: 260°C ● Plastic material has UL classification 94V-0 ● One green ring denotes cathode and ultrafast switching device ● The type numbers are noted only on the lable on the reel

文件：81.75 Kbytes 頁數(shù)：2 Pages

SEMIKRON

賽米控丹佛斯

500mW Hermetically Sealed Glass High Voltage Switching Diodes

Features ●? High Voltage Switching Device ?● Mini Melf package ?● Surface device type mounting ?● Hermetically sealed glass ?● Compression bonded construction ?● All external surface are corrosion resistant and leads are readily solderable ?● RoHS compliant ?● Matte Tin (Sn

文件：94.03 Kbytes 頁數(shù)：2 Pages

TSC

臺灣半導體

Single general-purpose switching diodes

General description Single general-purpose switching diodes, fabricated in planar technology, and encapsulated in small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) packages. Features ● High switching speed: trr ≤ 50 ns ● Low leakage current ● Low capacitance: Cd

文件：64.29 Kbytes 頁數(shù)：10 Pages

恩XP

SMALL SIGNAL SWITCHING DIODE

VOLTAGE RANGE: 50-200 V CURRENT: 250 mA FEATURES ◇ Silicon epitaxial planar diode ◇ High speed switching diode ◇ 500 mW power dissipation MECHANICAL DATA ◇ Case: MINI-MELF,glass case ◇ Polarity: Color band denotes cathode ◇ Weight: Approx 0.031 grams

文件：150.47 Kbytes 頁數(shù)：3 Pages

BILIN

銀河微電

SWITCHING DIODE

Features · Fast Switching Speed · Surface Mount Package Ideally Suited for Automatic Insertion · For General Purpose Switching Applications High Conductance

文件：394.3 Kbytes 頁數(shù)：2 Pages

DAESAN

Small Signal Diodes

FEATURES ? Silicon Epitaxial Planar Diodes ? For general purpose ? These diodes are also available in other case styles including: the DO-35 case with the type designations BAV19 to BAV21, the SOD-123 case with the type designations BAV19W to BAV21W, and the SOT-23 case with the

文件：144.13 Kbytes 頁數(shù)：4 Pages

GE

HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODES

VOLTAGE 120 to 250 Volts POWER 300 mWatts FEATURES ? Fast switching Speed. ? Surface Mount Package Ideally Suited For Automatic Insertion. ? Silicon Epitaxal Planar Construction. ? In compliance with EU RoHS 2002/95/EC directives

文件：46.17 Kbytes 頁數(shù)：2 Pages

PANJIT

強茂

SILICON EPITAXIAL PLANAR DIODES

SILICON EPITAXIAL PLANAR DIODES High Voltage General Purpose Diodes

文件：248.8 Kbytes 頁數(shù)：2 Pages

SEMTECH_ELEC

先之科半導體

HIGH SPEED SWITCHING DIODES

FEATURES : ? Switching speed: max. 50 ns ? General application ? Continuous reverse voltage: max. 50 V, 100 V, 150 V and 200 V respectively ? Repetitive peak reverse voltage: max. 60 V, 120 V, 200 V and 250 V respectively ? Repetitive peak forward current: max. 625 mA. ? Pb / RoH

文件：33.14 Kbytes 頁數(shù)：2 Pages

SYNSEMI

Single general-purpose switching diodes

Features and benefits * High switching speed: trr ≤ 50 ns * Low capacitance: Cd ≤ 5 pF * Low leakage current * Small hermetically sealed glass SMD package

文件：796.84 Kbytes 頁數(shù)：11 Pages

NEXPERIA

安世