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    BAT754C
    絲?。?a target="_blank" title="Marking" href="/2m/marking.html">2M；Package：SOT23；Schottky barrier diodes
    
1.1 General description
Planar Schottky barrier diodes with an integrated guard ring for stress protection,
encapsulated in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic
package.

1.2 Features and benefits
? Low forward voltage
? Low capacitance
? AEC-Q101 qualified

1.3 
    文件：2.10017 Mbytes 頁(yè)數(shù)：10 Pages
    NEXPERIA
    安世
    

    BAT754C-Q
    絲印：2M；Package：SOT23；Dual Schottky barrier diode
    
1. General description
Planar dual Schottky barrier diode with an integrated guard ring for stress protection, encapsulated
in a small SOT23 Surface-Mounted Device (SMD) plastic package.

2. Features and benefits
? Low forward voltage
? Low capacitance
? Qualified according to AEC-Q101 and 
    文件：193.94 Kbytes 頁(yè)數(shù)：8 Pages
    NEXPERIA
    安世
    

    BAT754L
    絲?。?a target="_blank" title="Marking" href="/l1/marking.html">L1；Package：TSSOP6；Schottky barrier triple diode
    
1.1 General description
Three internal isolated planar Schottky barrier diodes with an integrated guard ring for
stress protection, encapsulated in very small SOT363 Surface-Mounted Device
(SMD) plastic package.

1.2 Features and benefits
? Low forward voltage
? Low capacitance
? AEC-Q101 
    文件：1.95195 Mbytes 頁(yè)數(shù)：9 Pages
    NEXPERIA
    安世
    

    BAT754L
    Schottky barrier triple diode
    
DESCRIPTION

Three internal (galvanic) isolated silicon epitaxial Schottky barrier diodes in a SOT363 small SMD plastic package.


FEATURES

? Very low forward voltage

? Guard ring protected

? Low diode capacitance

? Three independent diodes in a small plastic SMD package.


APP
    文件：53.32 Kbytes 頁(yè)數(shù)：8 Pages
    PHI
    PHI
    PHI
    

    BAT754L
    Schottky barrier triple diode
    
DESCRIPTION

Three internal (galvanic) isolated silicon epitaxial Schottky barrier diodes in a SOT363 small SMD plastic package.


FEATURES

? Very low forward voltage

? Guard ring protected

? Low diode capacitance

? Three independent diodes in a small plastic SMD package.


APP
    文件：190.84 Kbytes 頁(yè)數(shù)：7 Pages
    恩XP
    恩XP
    

    BAT754L
    Schottky Barrier Triple Diode
    
Schottky Barrier Triple Diode


Features

Very low forward voltage

Guard ring protected

Low diode capacitance

Three independent diodes in a small plastic SMD package.
    文件：37.15 Kbytes 頁(yè)數(shù)：1 Pages
    KEXIN
    科信電子
    

    BAT754L-Q
    絲?。?a target="_blank" title="Marking" href="/l1/marking.html">L1；Package：TSSOP6；Schottky barrier triple diode
    
1. General description
Three internal isolated planar Schottky barrier diodes with an integrated guard ring for stress
protection, encapsulated in very small SOT363 Surface-Mounted Device (SMD) plastic package.

2. Features and benefits
? Low forward voltage
? Low capacitance
? Qualified ac
    文件：200.36 Kbytes 頁(yè)數(shù)：8 Pages
    NEXPERIA
    安世
    

    BAT754-Q
    絲印：2K；Package：SOT23；Schottky barrier diode
    
1. General description
Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a
small SOT23 Surface-Mounted Device (SMD) plastic package.

2. Features and benefits
? Low forward voltage
? Low capacitance
? Qualified according to AEC-Q101 and recom
    文件：193.72 Kbytes 頁(yè)數(shù)：8 Pages
    NEXPERIA
    安世
    

    BAT754S
    Schottky barrier double diodes
    
DESCRIPTION

Planar Schottky barrier diodes encapsulated in a SOT23 small plastic SMD package. Low forward voltage selection of the BAT54 series. Single diodes and double diodes with different pinning are available.


FEATURES

? Very low forward voltage

? Guard ring protected

? Small
    文件：47.02 Kbytes 頁(yè)數(shù)：8 Pages
    PHI
    PHI
    PHI
    

    BAT754S
    絲?。?a target="_blank" title="Marking" href="/2n/marking.html">2N；Package：SOT23；Schottky barrier diodes
    
1.1 General description
Planar Schottky barrier diodes with an integrated guard ring for stress protection,
encapsulated in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic
package.

1.2 Features and benefits
? Low forward voltage
? Low capacitance
? AEC-Q101 qualified

1.3 
    文件：2.10017 Mbytes 頁(yè)數(shù)：10 Pages
    NEXPERIA
    安世
    

    
            
    
		
        
    
            
    
                
    技術(shù)參數(shù)
    
            
    
            
      
            	
    • Compliance (Only Automotive supports PPAP)：
      Standard (Q on Request)
    • Configuration：
      Single
    • MaximumAverageRectifiedCurrent IO (A)：
      0.75 A
    • @ TerminalTemperature TT (oC)：
      25 oC
    • Peak RepetitiveReverse VoltageVRRM (V)：
      40 V
    • Peak ForwardSurge CurrentIFSM (A)：
      5.5 A
    • Forward Voltage Drop VF (V)：
      0.49 V
    • @ IF (A)：
      0.75 A
    • Maximum ReverseCurrent IR (μA)：
      100 μA
    • @ VR (V)：
      30 V
    • TotalCapacitance CT (pF)：
      175 pF
    • Packages：
      SOT23
    
            
    
        
    
            
    供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
    
                
    



    DISCRETE
    		

    3000
    		

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詢價(jià)
    

    



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    一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣!
    		
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    PHI
    		

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    SOT-23
    		

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詢價(jià)
    

    



    SOT-23
    		

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    NXP
    		

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詢價(jià)
    

    



    恩XP
    		

    24+
    		

    SOT-23
    		

    6200
    		

    新進(jìn)庫(kù)存/原裝
    		
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    24+/25+
    		

    		

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    恩XP
    		

    16+
    		

    NA
    		

    8800
    		

    誠(chéng)信經(jīng)營(yíng)
    		
詢價(jià)
    

    



    恩XP
    		

    17+
    		

    SOT-23
    		

    6200
    		

    100%原裝正品現(xiàn)貨
    		
詢價(jià)
    

    



    恩XP
    		

    24+
    		

    N/A
    		

    21322
    		

    公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫(kù)存!
    		
詢價(jià)
    

    



    恩XP
    		

    2016+
    		

    SOT23-3
    		

    3000
    		

    只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
    		
詢價(jià)
    

            
    
        
    
        
    更多BAT75供應(yīng)商
            更新時(shí)間2026-1-22 9:01:00
        
    
        
    
          
    
            
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