Low Forward Voltage Drop, Fast Switching

FEATURES ● Low Forward Voltage Drop. ● Fast Switching. ● PN Junction Guard Ring for Transient and ESD Protection.

文件：1.09912 Mbytes 頁數(shù)：2 Pages

SKTECHNOLGYSHIKE Electronics

時科廣東時科微實業(yè)有限公司

絲?。?a target="_blank" title="Marking" href="/43/marking.html">43；Package：SOT23；General-purpose Schottky diode

1. General description General-purpose Schottky diode in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits ? High switching speed ? Low leakage current ? High breakdown voltage ? Low capacitance ? AEC-Q101 qualified 3. Applications ? Ultr

文件：190.5 Kbytes 頁數(shù)：8 Pages

NEXPERIA

安世

200mW Plastic-Encapsulate Schottky Barrier Diodes

FEATURES ● Low Forward Voltage ● Fast Switching ● Moisture Sensitivity Level 1

文件：584.83 Kbytes 頁數(shù)：4 Pages

WILLAS

威倫電子

Plastic-Encapsulate Diodes

Plastic-Encapsulate Diodes FEATURES ? Low Forward Voltage ? Fast Switching

文件：255.45 Kbytes 頁數(shù)：2 Pages

HOTTECH

合科泰

SOT-23 Plastic-Encapsulate Diodes

Features ● Low Forward Voltage ● Fast Switchi

文件：2.57149 Mbytes 頁數(shù)：4 Pages

HDSEMI

海德半導體

SCHOTTKY BARRIER DIODE

DESCRIPTION Planar Schottky barrier diodes with an integrated guard ring for stress protection. Features ● Low forward current ● Guard ring protected ● Low diode capacitance. APPLICATIONS ● Ultra high-speed switching ● Voltage clamping ● Protection circuits. ● Blocking diodes.

文件：838.82 Kbytes 頁數(shù)：4 Pages

YEASHIN

亞昕科技

SCHOTTKY DIODES 120mA, 40V

DESCRIPTION 120mA Planar Schottky barrier diodes with an integrated guard ring for stress protection. Single diodes and double diodes with different pinning are available. The BAS40 is available in SOT 23 p a ckage FEATURES ? Low Turn-on Voltage ? Fast Switching ? Low forward current

文件：249.21 Kbytes 頁數(shù)：5 Pages

AITSEMI

創(chuàng)瑞科技

絲印：B1；200mA Surface Mount Small Signal Diodes

■ Features ? Low current rectification and high speed switching. ? Small surface mount type. ? Up to 200mA current capability. ? Low forward voltage drop (VF = 1.00V typ. @40mA). ? Silicon epitaxial planar chip, metal silicon junction. ? Suffix G indicates Halogen-free part, ex.BAS40G. ? Le

文件：167.82 Kbytes 頁數(shù)：3 Pages

CITC

竹懋科技

SCHOTTKY DIODE

FEATURES Power dissipation PD: 200 mW (Tamb=25℃) Forward Current IF: 200 m A Reverse Voltage VR: 40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：66.17 Kbytes 頁數(shù)：1 Pages

TEL

絲?。?a target="_blank" title="Marking" href="/43/marking.html">43；Package：SOT-23；SCHOTTKY BARRIER RECTIFIER

文件：1.56908 Mbytes 頁數(shù)：2 Pages

SAMYANG

三陽電子