High-voltage switching diode

High-voltage switching diode in a very small SOD323F (SC-90) flat lead Surface-Mounted Device (SMD) plastic package. ? High switching speed: trr ≤ 50 ns\n? Low leakage current: IR ≤ 100 nA\n? High reverse voltage VR ≤ 200 V\n? Low capacitance: Cd ≤ 2 pF\n? Very small SMD plastic package\n? Qualified according to AEC-Q101 and recommended for use in automotive applications;

Nexperia

安世

General purpose diode

1. General description General purpose diode fabricated in planar technology and encapsulated in a very small SOD323 (SC-76) plastic package. 2. Features and benefits ? Small plastic SMD package ? Switching speed: max. 50 ns ? General application ? Continuous reverse voltage: max. 200 V

文件：202.32 Kbytes 頁(yè)數(shù)：10 Pages

NEXPERIA

安世

PNP SILICON PLANAR EPITAXIAL TRANSISTOR

THE ABOVE TYPES ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS.

文件：225.47 Kbytes 頁(yè)數(shù)：4 Pages

MICRO-ELECTRONICS

THE ABOVE TYPES ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS

THE ABOVE TYPES ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS.

文件：164.7 Kbytes 頁(yè)數(shù)：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

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