Silicon RF Switching Diodes

Silicon RF Switching Diodes ● Design for use in shunt configuration ● High shunt signal isolation ● Low shunt insertion loss

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INFINEON

英飛凌

Preliminary data Silicon RF Switching Diode (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss)

Silicon RF Switching Diode ? Design for use in shunt configuration ? High shunt signal isolation ? Low shunt insertion loss

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SIEMENS

西門子

Silicon RF Switching Diode

Features ●Design for use in shunt configuration ●High shunt signal isolation ●Low shunt insertion loss

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KEXIN

科信電子

Silicon RF Switching Diode Preliminary data (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss)

Silicon RF Switching Diode ? Design for use in shunt configuration ? High shunt signal isolation ? Low shunt insertion loss

文件：30.64 Kbytes 頁數(shù)：4 Pages

SIEMENS

西門子

Silicon RF Switching Diode

Silicon RF Switching Diode ● Designed for use in shunt configuration in high performance RF switches ● High shunt signal isolation ● Low shunt insertion loss ● Optimized for short - open transformation using λ/4 lines

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INFINEON

英飛凌

Silicon RF Switching Diode

文件：75.66 Kbytes 頁數(shù)：6 Pages

INFINEON

英飛凌

Silicon RF Switching Diode

文件：75.66 Kbytes 頁數(shù)：6 Pages

INFINEON

英飛凌

Silicon RF Switching Diode

文件：824.06 Kbytes 頁數(shù)：6 Pages

INFINEON

英飛凌

Silicon RF Switching Diode

文件：824.06 Kbytes 頁數(shù)：6 Pages

INFINEON

英飛凌

射頻PIN型二極管

This Infineon cost optimized RF PIN diode is designed for high performance switches. Its shunt configuration results in reduces parasitic inductance and is mostly suited for high-speed switching applications. ? Optimized for short - open transformation using λ/4 transmission lines\n? Reduced impact of parasitic inductance due to design\n? High shunt signal isolation ISO = 27 dB (typical) at forward current IF = 1 mA and frequency f = 1 GHz\n? Low shunt insertion loss IL = 0.17 dB (typical) at voltage VR ;

Infineon

英飛凌