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          首頁 >BAP>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          BAP63-02

          Silicon PIN diode

          Features ● High speed switching for RF signals ● Low diode capacitance ● Low diode forward resistance ● Very low series inductance. ● For applications up to 3 GHz.

          文件:36.56 Kbytes 頁數(shù):2 Pages

          KEXIN

          科信電子

          BAP63-03

          Silicon PIN diode

          DESCRIPTION Planar PIN diode in a SOD323 small SMD plastic package. FEATURES ? High speed switching for RF signals ? Low diode capacitance ? Low diode forward resistance ? Very low series inductance ? For applications up to 3 GHz. APPLICATIONS ? RF attenuators and switches.

          文件:171.42 Kbytes 頁數(shù):2 Pages

          ETL

          亞歷電子

          BAP63-03

          Silicon PIN diode

          DESCRIPTION Planar PIN diode in a SOD323 small SMD plastic package. FEATURES ? High speed switching for RF signals ? Low diode capacitance ? Low diode forward resistance ? Very low series inductance ? For applications up to 3 GHz. APPLICATIONS ? RF attenuators and switches.

          文件:111.35 Kbytes 頁數(shù):2 Pages

          LRC

          樂山無線電

          BAP63-03

          RF Manual 16th edition

          General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

          文件:9.37507 Mbytes 頁數(shù):130 Pages

          恩XP

          恩XP

          BAP63-03

          Silicon PIN diode

          DESCRIPTION Planar PIN diode in a SOD323 small SMD plastic package. FEATURES ? High speed switching for RF signals ? Low diode capacitance ? Low diode forward resistance ? Very low series inductance ? For applications up to 3 GHz. APPLICATIONS ? RF attenuators and switches.

          文件:66.34 Kbytes 頁數(shù):7 Pages

          PHI

          PHI

          PHI

          BAP63-05

          Silicon PIN diode

          DESCRIPTION Two planar PIN diodes in common cathode configuration in a SOT23 small plastic SMD package. FEATURES ? High speed switching for RF signals ? Low diode capacitance ? Low diode forward resistance ? Low series inductance ? For applications up to 3 GHz. APPLICATIONS ? RF attenuato

          文件:76.63 Kbytes 頁數(shù):6 Pages

          PHI

          PHI

          PHI

          BAP63-05W

          Silicon PIN diode

          DESCRIPTION Two planar PIN diodes in common cathode configuration in a SOT323 small SMD plastic package. FEATURES ? High speed switching for RF signals ? Low diode capacitance ? Low diode forward resistance ? Low series inductance ? For applications up to 3 GHz. APPLICA

          文件:77.11 Kbytes 頁數(shù):8 Pages

          PHI

          PHI

          PHI

          BAP63-05W

          Silicon PIN diode

          FEATURES ? High speed switching for RF signals ? Low diode capacitance ? Low diode forward resistance ? Low series inductance ? For applications up to 3 GHz. APPLICATIONS ? RF attenuators and switches. DESCRIPTION Two planar PIN diodes in common cathode configuration in a SOT323 smal

          文件:217.92 Kbytes 頁數(shù):8 Pages

          恩XP

          恩XP

          BAP63-05W

          RF Manual 16th edition

          General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

          文件:9.37507 Mbytes 頁數(shù):130 Pages

          恩XP

          恩XP

          BAP63LX

          RF Manual 16th edition

          General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

          文件:9.37507 Mbytes 頁數(shù):130 Pages

          恩XP

          恩XP

          技術(shù)參數(shù)

          • Product Polarity:

            ?PNP

          • SMD/ThroHole:

            ?SMD

          • VCEO (V):

            ?-32

          • VCBO (V):

            ?-40

          • VEBO (V):

            ?-5.0

          • IC (A):

            ?-1.0

          • PC (W):

            ?0.5

          • HFE:

            ?82-180

          • @IC (mA):

            ?-100

          • @VCE (V):

            ?-3.0

          • ICBO:

            ?-0.5 μA

          • IEBO:

            ?-0.5 μA

          • VCE(sat) (V):

            ?-0.5

          • VBE(sat) (V):

            ?

          • FT (MHz):

            ?150

          • Package Qty:

            ?Tape

          • FIT:

            ?48; Tj=100℃

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          一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
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          更多BAP供應(yīng)商 更新時間2026-1-20 14:01:00
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