High-speed diodes

DESCRIPTION The BA316, BA317, BA318 are high-speed switching diodes fabricated in planar technology, and encapsulated in hermetically sealed leaded glass SOD27 (DO-35) packages. FEATURES ? Hermetically sealed leaded glass SOD27 (DO-35) package ? High switching speed: max. 4 ns ? G

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PHI

PHI

Trickle-charge IC for two-cell, lithium-ion batteries

The BA3170 is a trickle-charge IC developed for two-cell, lithium-ion batteries.The IC includes a charge control circuit, a charge output transistor, and an LED driver for showing the charging status. Features 1) Output voltage can be varied using an external resistor. 2) The output pin

文件：130.18 Kbytes 頁數(shù)：8 Pages

ROHM

羅姆

Trickle-charge IC for two-cell, lithium-ion batteries

The BA3170 is a trickle-charge IC developed for two-cell, lithium-ion batteries.The IC includes a charge control circuit, a charge output transistor, and an LED driver for showing the charging status. 1) Output voltage can be varied using an external resistor.\n2) The output pin is PNP output with low saturation voltage.\n3) Built-in output current limiting circuit protects batteries from excessive current, and prevents destruction of the IC due to output shorts. The initial charge current is set;

ROHM

羅姆

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

THE ABOVE TYPES ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS.

文件：228.49 Kbytes 頁數(shù)：4 Pages

MICRO-ELECTRONICS

NPN SILICON PLANAR EPITAXIAL TRANSISTOR

文件：113.75 Kbytes 頁數(shù)：5 Pages

CDIL

NPN SILICON PLANAR EPITAXIAL TRANSISTOR

文件：113.75 Kbytes 頁數(shù)：5 Pages

CDIL