BA/BC Series: 1.5 - 6.0 Watts Single and Dual Outputs

FEATURES ? Input π Filter ? Fully Regulated Outputs ? Industry Standard Pinouts ? 5, 12, 24, 28, and 48 VDC Inputs ? Ripple and Noise Less Than 50mVpp ? Input/Output Isolation

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Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Features ? Build in Biasing Circuit; To reduce using parts cost & PC board space. ? Superior cross modulation characteristics. ? High gain; (PG = 28 dB typ. at f = 200 MHz) ? Wide supply voltage range; Applicable with 5 V to 9 V supply voltage. ? Withstanding to ESD; Build in ESD absorbin

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HITACHIHitachi Semiconductor

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Built in Biasing Circuit MOS FET IC VHF RF Amplifier

Features ? Built in Biasing Circuit; To reduce using parts cost & PC board space. ? Superior cross modulation characteristics. ? High gain; (PG = 28 dB typ. at f = 200 MHz) ? Wide supply voltage range; Applicable with 5 V to 9 V supply voltage. ? Withstanding to ESD; Built in ESD absorbin

文件：213.52 Kbytes 頁數(shù)：10 Pages

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Built in Biasing Circuit MOS FET IC VHF RF Amplifier

Features ? Built in Biasing Circuit; To reduce using parts cost & PC board space. ? Superior cross modulation characteristics. ? High gain; (PG = 28 dB typ. at f = 200 MHz) ? Wide supply voltage range; Applicable with 5 V to 9 V supply voltage. ? Withstanding to ESD; Built in ESD absorbin

文件：213.52 Kbytes 頁數(shù)：10 Pages

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