512Mb C-die NOR FLASH

GENERAL DESCRIPTION The K8A(10/11/12/13)15E featuring single 1.8V power supply is a 512Mbit Muxed Burst Multi Bank Flash Memory organized as 32Mx16. The memory architecture of the device is designed to divide its memory arrays into 512blocks(Uniform block part)/515blocks(Boot block part) with ind

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SAMSUNG

三星

HIGH SPEED HIGH CURRENT QUAD SWITCHING DIODE

Features ? High-Switching Speed, High Current ? Surface Mount Package Ideally Suited for Automated Insertion ? For General Purpose Switching Applications ? High Conductance ? Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) ? Halogen and Antimony Free. “Green” Device (Note 3) ? Qualif

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DIODES

美臺半導體

NPN HIGH VOLTAGE VIDEO AMPLIFIERS

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MICRO-ELECTRONICS

P-channel enhancement mode MOS transistor

DESCRIPTION P-channel enhancement mode MOS transistor in a SOT363 SMD package. FEATURES ? Low threshold voltage ? High-speed switching ? No secondary breakdown ? Direct interface to C-MOS, TTL, etc. APPLICATIONS ? Power management ? Battery powered applications e.g. cellular phones ? Gen

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PHI

PHI