Band-switching diode

DESCRIPTION Planar high performance band-switching diode in a small plastic SOD523V SMD package. FEATURES ? Small plastic SMD package ? Continuous reverse voltage: max. 35 V ? Continuous forward current: max. 100 mA ? Low diode capacitance: max. 1.2 pF ? Low diode forward resistance: max. 0

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PHI

PHI

Band-switching diode

FEATURES ? Small plastic SMD package ? Continuous reverse voltage: max. 35 V ? Continuous forward current: max. 100 mA ? Low diode capacitance: max. 1.2 pF ? Low diode forward resistance: max. 0.7 Ω. APPLICATIONS ? Low loss band switching in VHF television tuners. ? Surface mount band-sw

文件：88.77 Kbytes 頁數(shù)：5 Pages

恩XP

Band-switching diode

Overview Archived content is no longer updated and is made available for historical reference only.\nPlanar high-performance band-switching diode in a small plastic SOD523V SMD package. \n?Low diode capacitance\n?Low diode forward resistance;

恩XP

VHF push-pull power MOS transistor

DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT262A1 balanced flange package with two ceramic caps. The mounting flange provides the common source connection for the transistors. FEATURES ? High power gain ? Easy power contr

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PHI

PHI

VHF POWER MOSFET

DESCRIPTION: The ASI BLF278 is a Dual Common Source N-Channel EnhancementMode MOSFET RF Power Transistor, Designed for 175 MHz, 300 W Transmitter and Amplifier Applications.

文件：103.27 Kbytes 頁數(shù)：7 Pages

ASI

VHP push-pull power MOS transistor

DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT262A1 balanced flange package with two ceramic caps. The mounting flange provides the common source connection for the transistors. FEATURES ? High power gain ? Easy power contr

文件：129.62 Kbytes 頁數(shù)：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

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