High voltage, high current Darlington transistor array

The BA12001B, BA12003B, BA12003BF, and BA12004B are high voltage, high current, high sustain voltage transistor arrays consisting of seven circuits of Darlington transistors. Because it incorporates built-in surge-absorbing diodes and base current-control resistors needed when using inductive loa

文件：58.69 Kbytes 頁數(shù)：6 Pages

ROHM

羅姆

7 Circuits Darlinton Transistor Array

General Description BA12003B/BF,BA12004B/BFare darlinton transistor array consist of 7circuits, input resistor to limit base current and output surge absorption clamp diode. Features ■ Built-in 7 circuits ■ High output break down voltage ■ High DC output current gain ■ Built-in input res

文件：1.1641 Mbytes 頁數(shù)：19 Pages

ROHM

羅姆

High voltage, high current Darlington transistor array

文件：115.89 Kbytes 頁數(shù)：7 Pages

ROHM

羅姆

7 Circuits Darlinton Transistor Array

General Description BA12003B/BF,BA12004B/BFare darlinton transistor array consist of 7circuits, input resistor to limit base current and output surge absorption clamp diode. Features ■ Built-in 7 circuits ■ High output break down voltage ■ High DC output current gain ■ Built-in input res

文件：1.1641 Mbytes 頁數(shù)：19 Pages

ROHM

羅姆

7 Circuits Darlinton Transistor Array

General Description BA12003B/BF,BA12004B/BFare darlinton transistor array consist of 7circuits, input resistor to limit base current and output surge absorption clamp diode. Features ■ Built-in 7 circuits ■ High output break down voltage ■ High DC output current gain ■ Built-in input res

文件：1.1641 Mbytes 頁數(shù)：19 Pages

ROHM

羅姆

High voltage, high current Darlington transistor array

The BA12001B, BA12003B, BA12003BF, and BA12004B are high voltage, high current, high sustain voltage transistor arrays consisting of seven circuits of Darlington transistors. Because it incorporates built-in surge-absorbing diodes and base current-control resistors needed when using inductive loa

文件：58.69 Kbytes 頁數(shù)：6 Pages

ROHM

羅姆

High voltage, high current Darlington transistor array

The BA12001B, BA12003B, BA12003BF, and BA12004B are high voltage, high current, high sustain voltage transistor arrays consisting of seven circuits of Darlington transistors. Because it incorporates built-in surge-absorbing diodes and base current-control resistors needed when using inductive loa

文件：115.89 Kbytes 頁數(shù)：7 Pages

ROHM

羅姆

7 Circuits Darlinton Transistor Array

General Description BA12003B/BF,BA12004B/BFare darlinton transistor array consist of 7circuits, input resistor to limit base current and output surge absorption clamp diode. Features ■ Built-in 7 circuits ■ High output break down voltage ■ High DC output current gain ■ Built-in input res

文件：1.1641 Mbytes 頁數(shù)：19 Pages

ROHM

羅姆

High voltage, high current Darlington transistor array

文件：115.89 Kbytes 頁數(shù)：7 Pages

ROHM

羅姆

High voltage, high current Darlington transistor array

The BA12001B, BA12003B, BA12003BF, and BA12004B are high voltage, high current, high sustain voltage transistor arrays consisting of seven circuits of Darlington transistors.\nBecause it incorporates built-in surge-absorbing diodes and base current-control resistors needed when using inductive loads 1) High output current. (IOUT=500mA Max.)\n2) High output sustain voltage. (VOUT=50V Max.)\n3) Seven Darlington transistors built in.\n4) Built-in surge-absorbing clamp diode.\n?? (Note : Refer to the “Reference items when using in application.” )Applications\n?? Drivers for LEDs, lamps, relays and ;

ROHM

羅姆