Type B6N Load Cell

Short Description ? Stainless steel IP67 single point load cell ? Bending beam ? Suitable for weighing equipment like platform and belt scales ? Maximum platform size: 400 x 400 mm

文件：394.88 Kbytes 頁(yè)數(shù)：3 Pages

ZEMIC

澤米克

N-channel 900V - 1.56 - 5.8A Zener-protected SuperMESH Power MOSFET

Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH? technology by STMicroelectronics, an optimization of the well-established PowerMESH?. In addition to a significant reduction in on-resistance, these devices are designed to ensure a h

文件：483.55 Kbytes 頁(yè)數(shù)：12 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/b6nk60z/marking.html">B6NK60Z；Package：I2PAK；N-CHANNEL 600V - 1ohm - 6A TO-220/TO-220FP/D2PAK/I2PAK Zener-Protected SuperMESH??ower MOSFET

The SuperMESH series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

文件：578.48 Kbytes 頁(yè)數(shù)：13 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/b6nk60z/marking.html">B6NK60Z；Package：D2PAK；N-CHANNEL 600V - 1ohm - 6A TO-220/TO-220FP/D2PAK/I2PAK Zener-Protected SuperMESH??ower MOSFET

The SuperMESH series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

文件：578.48 Kbytes 頁(yè)數(shù)：13 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲印：B6NK90Z；Package：D2PAK；N-channel 900V - 1.56 - 5.8A Zener-protected SuperMESH Power MOSFET

Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH? technology by STMicroelectronics, an optimization of the well-established PowerMESH?. In addition to a significant reduction in on-resistance, these devices are designed to ensure a h

文件：483.55 Kbytes 頁(yè)數(shù)：12 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/b6nk60z/marking.html">B6NK60Z；Package：D2PAK；N-channel 600 V - 1 廓 - 6 A - TO-220/TO-220FP/D2PAK/I2PAK Zener-Protected SuperMESH??Power MOSFET

文件：444.64 Kbytes 頁(yè)數(shù)：17 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲印：B6NK60Z；Package：I2PAK；N-channel 600 V - 1 廓 - 6 A - TO-220/TO-220FP/D2PAK/I2PAK Zener-Protected SuperMESH??Power MOSFET

文件：444.64 Kbytes 頁(yè)數(shù)：17 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/b6nm60n/marking.html">B6NM60N；Package：D2PAK；N-channel 600 V, 0.85 ?? 4.6 A MDmesh??II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK

文件：698.48 Kbytes 頁(yè)數(shù)：19 Pages

STMICROELECTRONICS

意法半導(dǎo)體