絲?。?strong>B630；Package：TO-262；9A 200V N-channel Enhancement Mode Power MOSFET

1 Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. 2 Features ● Fast Switching ● Low ON Resistance(Rdso

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ETCList of Unclassifed Manufacturers

未分類制造商

630 tie-point Solderless Plug-in BreadBoard

BB630 Features: ? 630 tie-point IC-circuit area. ? White ABS plastic body with black printed legend. ? Contacts are Phosphor Bronze with Plated Nickel Finish, rated for 50,000 insertions. ? Rated at 36 Volts, 2 Amps. ? Insertion Wire Size is 21 to 26 AWG, 0.016 to 0.028 inches diameter (0.4 t

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NPN wideband silicon RF transistor

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PHI

PHI