絲?。?strong>B4N；Package：DFN3333-8A；N-Channel 40-V (D-S) MOSFET Low RDS(on) trench technology.

文件：656.98 Kbytes 頁數(shù)：5 Pages

LRC

樂山無線電

絲?。?a target="_blank" title="Marking" href="/b4nk60z/marking.html">B4NK60Z；Package：I2PAK；N-channel 600 V, 1.7 Ω typ., 4 A SuperMESH? Power MOSFETs in I2PAK, D2PAK, IPAK and DPAK packages

Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH? technology by STMicroelectronics, an optimization of the well-established PowerMESH?. In addition to a significant reduction in on-resistance, these devices are designed to ensure

文件：731.33 Kbytes 頁數(shù)：32 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/b4nk60z/marking.html">B4NK60Z；Package：D2PAK；N-channel 600 V, 1.7 Ω typ., 4 A SuperMESH? Power MOSFETs in I2PAK, D2PAK, IPAK and DPAK packages

Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH? technology by STMicroelectronics, an optimization of the well-established PowerMESH?. In addition to a significant reduction in on-resistance, these devices are designed to ensure

文件：731.33 Kbytes 頁數(shù)：32 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/b4ne60/marking.html">B4NE60；Package：TO-251；4A 600V N-channel Enhancement Mode Power MOSFET

文件：1.37903 Mbytes 頁數(shù)：13 Pages

WXDH

東海半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/b4ne60/marking.html">B4NE60；Package：TO-251；4A 600V N-channel Enhancement Mode Power MOSFET

文件：1.38412 Mbytes 頁數(shù)：13 Pages

WXDH

東海半導(dǎo)體

絲印：B4NE60；Package：TO-251；4A 600V N-channel Enhancement Mode Power MOSFET

文件：1.37945 Mbytes 頁數(shù)：13 Pages

WXDH

東海半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/b4ne60/marking.html">B4NE60；Package：TO-251；4A 600V N-channel Enhancement Mode Power MOSFET

文件：1.37912 Mbytes 頁數(shù)：13 Pages

WXDH

東海半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/b4ne60/marking.html">B4NE60；Package：TO-251；4A 600V N-channel Enhancement Mode Power MOSFET

文件：1.37968 Mbytes 頁數(shù)：13 Pages

WXDH

東海半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/b4ne60/marking.html">B4NE60；Package：TO-251；4A 600V N-channel Enhancement Mode Power MOSFET

文件：1.37886 Mbytes 頁數(shù)：13 Pages

WXDH

東海半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/b4ne65/marking.html">B4NE65；Package：TO-251；4A 650V N-channel Enhancement Mode Power MOSFET

文件：1.32932 Mbytes 頁數(shù)：13 Pages

WXDH

東海半導(dǎo)體