POWER MODULES DIODE

Description The B40J../B40C../B40D.. series of B-modules use power diodes in half0bridge configuration. The semiconductors are electrically isolated from the metal base allowing common heatsink and compact assemblies to be built. They can be interconnected to form single or three phase bridges.

文件：340.58 Kbytes 頁數：6 Pages

IRF

Dual High-Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier

FEATURES ? Trench MOS Schottky technology ? Very low profile - typical height of 1.7 mm ? Ideal for automated placement ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ? AEC-Q101 qualified available: -

文件：127.27 Kbytes 頁數：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：101.78 Kbytes 頁數：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

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JST/日壓

上傳：深圳市駿創(chuàng)達科技有限公司

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JST

JST集團

上傳：深圳市駿創(chuàng)達科技有限公司