絲印：B31；Package：SMB；100 V, 3 A Schottky rectifier

文件：204.47 Kbytes 頁數(shù)：9 Pages

STMICROELECTRONICS

意法半導體

絲印：B3100AG；Package：SMA；Surface Mount Schottky Barrier Rectifier

Reverse Voltage - 20 to 200 V Forward Current - 3.0A Features ? Metal silicon junction, majority carrier conduction ? For surface mounted applications ? Low power loss, high efficiency ? High forward surge current capability ? For use in low voltage, high frequency inverters, free wheeli

文件：1.41158 Mbytes 頁數(shù)：3 Pages

SKTECHNOLGYSHIKE Electronics

時科廣東時科微實業(yè)有限公司

絲?。?a target="_blank" title="Marking" href="/b3120ag/marking.html">B3120AG；Package：SMA；Surface Mount Schottky Barrier Rectifier

Reverse Voltage - 20 to 200 V Forward Current - 3.0A Features ? Metal silicon junction, majority carrier conduction ? For surface mounted applications ? Low power loss, high efficiency ? High forward surge current capability ? For use in low voltage, high frequency inverters, free wheeli

文件：1.41158 Mbytes 頁數(shù)：3 Pages

SKTECHNOLGYSHIKE Electronics

時科廣東時科微實業(yè)有限公司

絲印：B3150AG；Package：SMA；Surface Mount Schottky Barrier Rectifier

Reverse Voltage - 20 to 200 V Forward Current - 3.0A Features ? Metal silicon junction, majority carrier conduction ? For surface mounted applications ? Low power loss, high efficiency ? High forward surge current capability ? For use in low voltage, high frequency inverters, free wheeli

文件：1.41158 Mbytes 頁數(shù)：3 Pages

SKTECHNOLGYSHIKE Electronics

時科廣東時科微實業(yè)有限公司

絲?。?a target="_blank" title="Marking" href="/b3100/marking.html">B3100；Package：F3-D；SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

FEATURES ? Very low profile package ? High efficiency ? Extremely fast switching ? Negligible switching losses ? Low forward voltage drop, low power loss ? Qualified to AEC-Q101 Rev_C ? Lead-Free Finish; RoHS Compliant (Notes 1 & 2) ? Halogen and Antimony Free. “Green” Device (Note 3) A

文件：334.43 Kbytes 頁數(shù)：4 Pages

DIODES

美臺半導體

絲?。?a target="_blank" title="Marking" href="/b3100/marking.html">B3100；Package：F3-D；SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

FEATURES ? Very low profile package ? High efficiency ? Extremely fast switching ? Negligible switching losses ? Low forward voltage drop, low power loss ? Qualified to AEC-Q101 Rev_C ? Lead-Free Finish; RoHS Compliant (Notes 1 & 2) ? Halogen and Antimony Free. “Green” Device (Note 3) A

文件：334.43 Kbytes 頁數(shù)：4 Pages

DIODES

美臺半導體

絲?。?a target="_blank" title="Marking" href="/b3115/marking.html">B3115；Package：PRPAK3X3；P-Ch 30V Fast Switching MOSFETs

Description The FKBB3115 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKBB3115 meet the RoHS and Green Product requirement 100 EAS guaranteed with full function reliability approved

文件：1.01751 Mbytes 頁數(shù)：6 Pages

FETEK

臺灣東沅

絲?。?a target="_blank" title="Marking" href="/b3103/marking.html">B3103；Package：DFN3X3；P-Channel Enhancement Mode Power MOSFET

General Features VDS = -30V,ID = -32A RDS(ON)

文件：537.64 Kbytes 頁數(shù)：9 Pages

RECTRON

麗正國際

絲印：B3105；Package：DFN3x3EP；P-Channel Enhancement Mode Power MOSFET

General Features VDS =-30V,ID =-42A RDS(ON)

文件：396.09 Kbytes 頁數(shù)：9 Pages

RECTRON

麗正國際

絲?。?a target="_blank" title="Marking" href="/b31y/marking.html">B31Y；Package：SMB；Automotive 100 V, 3 A power Schottky rectifier

文件：206.97 Kbytes 頁數(shù)：9 Pages

STMICROELECTRONICS

意法半導體