絲印：B20；Package：SOT23-3L；Precision micropower shunt voltage reference

Features ? Fixed 2.048 V, 2.5 V, 3.0 V, 4.096 V and 5.0 V output voltages ? Ultra low operating current: 10 μA at 25 °C ? High precision @ 25 °C: +/- 0.1% (LM4040A), +/- 0.2% (LM4040B), +/- 0.5 % (LM4040C), +/- 1% (LM4040D) ? Very low LF noise: typ.10 μ Vp-p ? Stable when used

文件：1.10753 Mbytes 頁數(shù)：22 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/b20n03/marking.html">B20N03；Package：SOP-8；MOSFET

Features - Single drive requirement. - Low on-resistance. - Fast switching characteristic. - Dynamic dv/dt rating. - Repetitive avalanche rated.

文件：531.87 Kbytes 頁數(shù)：6 Pages

COMCHIP

典琦

絲?。?a target="_blank" title="Marking" href="/b20100/marking.html">B20100；Package：TO-220；SWITCHMODE Schottky Power Rectifier

The D2PAK Power Rectifier is a state?of?the?art device that employs the use of the Schottky Barrier principle with a platinum barrier metal. Features ? Package Designed for Power Surface Mount Applications ? Center?Tap Configuration ? Guardring for Stress Protection ? Low Forward Voltage ? 1

文件：79.21 Kbytes 頁數(shù)：4 Pages

ONSEMI

安森美半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/b20nk50z/marking.html">B20NK50Z；Package：I2SPAK；N-CHANNEL 500V -0.23 OHM - 17A TO-220/D2PAK/I2SPAK/TO-247

DESCRIPTION The SuperMESH? series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH? layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such seri

文件：383.12 Kbytes 頁數(shù)：13 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/b20nk50z/marking.html">B20NK50Z；Package：D2PAK；N-CHANNEL 500V -0.23 OHM - 17A TO-220/D2PAK/I2SPAK/TO-247

DESCRIPTION The SuperMESH? series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH? layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such seri

文件：383.12 Kbytes 頁數(shù)：13 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/b20nm60/marking.html">B20NM60；Package：I2PAK；N-CHANNEL 600V - 0.25ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET

Features 1. High dv/dt and avalanche capabilities 2. 100 avalanche tested 3. Low input capacitance and gate charge 4. Low gate input resistance Applications 1. Switching applications Description The MDmesh? is a new revolutionary Power MOSFET technology that associates the multiple

文件：355.14 Kbytes 頁數(shù)：15 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/b20nm60/marking.html">B20NM60；Package：D2PAK；N-CHANNEL 600V - 0.25ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET

Features 1. High dv/dt and avalanche capabilities 2. 100 avalanche tested 3. Low input capacitance and gate charge 4. Low gate input resistance Applications 1. Switching applications Description The MDmesh? is a new revolutionary Power MOSFET technology that associates the multiple

文件：355.14 Kbytes 頁數(shù)：15 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/b20150pr/marking.html">B20150PR；Package：TO-220F-3L；Dual Common Anode Schottky Rectifier

文件：208.87 Kbytes 頁數(shù)：5 Pages

KODENSHI

可天士

絲?。?a target="_blank" title="Marking" href="/b20nk50z/marking.html">B20NK50Z；Package：ISPAK；N-channel 500 V, 0.23 廓, 17 A SuperMESH??Power MOSFET Zener-protected TO-220, TO-247, TO-220FP, D2PAK

文件：613.26 Kbytes 頁數(shù)：18 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/b20nk50z/marking.html">B20NK50Z；Package：DPAK；N-channel 500 V, 0.23 廓, 17 A SuperMESH??Power MOSFET Zener-protected TO-220, TO-247, TO-220FP, D2PAK

文件：613.26 Kbytes 頁數(shù)：18 Pages

STMICROELECTRONICS

意法半導(dǎo)體