絲印：B1184041；Package：TO-252；PNP Epitaxial Silicon Transistor

文件：189.59 Kbytes 頁數(shù)：3 Pages

SECOS

喜可士

絲?。?a target="_blank" title="Marking" href="/b110/marking.html">B110；Package：DFN1010B-6；20 V, complementary N/P-channel Trench MOSFET

文件：801.62 Kbytes 頁數(shù)：21 Pages

NEXPERIA

安世

絲?。?a target="_blank" title="Marking" href="/b111/marking.html">B111；Package：DFN1010B-6；20 V, dual P-channel Trench MOSFET

文件：739.16 Kbytes 頁數(shù)：16 Pages

NEXPERIA

安世

1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER

The schottky rectifier providing low VF and excellent reverse leakage stability at high temperatures, this device is ideal for use in general rectification applications. Reduced Low Forward Voltage Drop (VF); Better Efficiency and Cooler Operation\nReduced High-temperature Reverse Leakage; Increased Reliability against Thermal Runaway Failure in High Temperature Operation.\nLead-Free Finish; RoHS Compliant\nHalogen and Antimony Free. “Green” Device;

Diodes

美臺半導體

1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

This Schottky Barrier Rectifier is designed to meet the general requirements of commercial & automotive applications.\n\n ?Guard Ring Die Construction for Transient Protection\n?Low Power Loss, High Efficiency\n?For Use in Low Voltage Drop, High Frequency Inverters, Freewheeling, and Polarity Protection Application\n?Lead-Free & Fully RoHS Compliant\n?Qualified to AEC-Q101 Standards for High Reliability\n?PPAP Capable\;

Diodes

美臺半導體

Schottky

Diodes

美臺半導體

Package：DO-214AC，SMA；包裝：卷帶（TR）剪切帶（CT） 類別：分立半導體產(chǎn)品 二極管 - 整流器 - 單 描述：DIODE SCHOTTKY 100V 1A SMA

DIODES

美臺半導體

Package：DO-214AC，SMA；包裝：卷帶（TR） 類別：分立半導體產(chǎn)品 二極管 - 整流器 - 單 描述：DIODE SCHOTTKY 100V 1A SMA

DIODES

美臺半導體

Package：DO-214AA，SMB；包裝：卷帶（TR） 類別：分立半導體產(chǎn)品 二極管 - 整流器 - 單 描述：DIODE SCHOTTKY 100V 1A SMB

DIODES

美臺半導體