Rad-Hard 150 nm SOI CMOS Cell-based ASIC for Space Use

文件：224.21 Kbytes 頁(yè)數(shù)：22 Pages

MICROCHIP

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Rad-Hard 150 nm SOI CMOS Cell-based ASIC for Space Use

文件：224.21 Kbytes 頁(yè)數(shù)：22 Pages

MICROCHIP

微芯科技

Rad-Hard 150 nm SOI CMOS Cell-based ASIC for Space Use

文件：224.21 Kbytes 頁(yè)數(shù)：22 Pages

MICROCHIP

微芯科技

Rad-Hard 150 nm SOI CMOS Cell-based ASIC for Space Use

文件：224.21 Kbytes 頁(yè)數(shù)：22 Pages

MICROCHIP

微芯科技

Rad-Hard 150 nm SOI CMOS Cell-based ASIC for Space Use

文件：224.21 Kbytes 頁(yè)數(shù)：22 Pages

MICROCHIP

微芯科技

Rad-Hard 150 nm SOI CMOS Cell-based ASIC for Space Use

文件：224.21 Kbytes 頁(yè)數(shù)：22 Pages

MICROCHIP

微芯科技

Rad-Hard 150 nm SOI CMOS Cell-based ASIC for Space Use

文件：224.21 Kbytes 頁(yè)數(shù)：22 Pages

MICROCHIP

微芯科技

Rad Hard ASICs Products

ATMX150RHA is a mixed-signal ASIC offer providing high-performance and high-density solutions for space applications.? This provides for ASIC solutions of up to 22 million routable gates.? With a set of pre-qualified analog IPs, such as DACs, DACs, PLL, regulators, ATMX150RHA eases the design of mix ? Analog and digital functionality and IP blocks\n? Up to 22M NAND2-equivalent usable gates\n? 32kB of NVM memory blocks\n? High-speed LVDS buffers, 655Mbps according to TIA/EIA-644-A std\n? No single event latch-up below LET threshold of 75 MeV/mg/cm2 at 125°C; TID test up to 300kRads (Si) for 1.8V;

Microchip

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