0.5-12 GHz Low Noise Gallium Arsenide FET

Description The ATF-10136 is a high performance gallium arsenide Schottky-barrier gate field effect transistor housed in a cost effective microstrip package. Its premium noise figure makes this device appropriate for use in the first stage of low noise amplifiers operat ing in the 0.5-12 GHz fr

文件：46.87 Kbytes 頁數(shù)：3 Pages

HP

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0.5-12 GHz Low Noise Gallium Arsenide FET

Agilent

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0.5-12 GHz Low Noise Gallium Arsenide FET

Description The ATF-10136 is a high performance gallium arsenide Schottky-barrier gate field effect transistor housed in a cost effective microstrip package. Its premium noise figure makes this device appropriate for use in the first stage of low noise amplifiers operat ing in the 0.5-12 GHz fr

文件：46.87 Kbytes 頁數(shù)：3 Pages

HP

安捷倫

0.5-12 GHz Low Noise Gallium Arsenide FET

Description The ATF-10136 is a high performance gallium arsenide Schottky-barrier gate field effect transistor housed in a cost effective microstrip package. Its premium noise figure makes this device appropriate for use in the first stage of low noise amplifiers operat ing in the 0.5-12 GHz fr

文件：46.87 Kbytes 頁數(shù)：3 Pages

HP

安捷倫

0.5 – 12 GHz Low Noise Gallium Arsenide FET

Description\nThe ATF-10136 is a high performance gallium arsenide Schottky-barrier gate field effect transistor housed in a cost effective microstrip package. Its premium noise figure makes this device appropriate for use in the first stage of low noise amplifiers operat ing in the 0.5-12 GHz freque ? Low Noise Figure: 0.5 dB Typical at 4 GHz\n? Low Bias:? VDS= 2 V, IDS? =? 20 mA\n? High Associated Gain:? 13.0 dB Typical at 4 GHz\n? High Output Power:?? 20.0 dBm Typical P1 dB at 4 GHz\n? Cost Effective Ceramic Microstrip Package\n? Tape-and Reel Packaging Option Available[1];

Agilent

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