1800–2200 MHz, 32 W AVG., 48 V AIRFAST RF POWER GaN TRANSISTOR

Features ? High Terminal Impedances for Optimal Broadband Performance ? Designed for Digital Predistortion Error Correction Systems ? Optimized for Doherty Applications

文件：761.3 Kbytes 頁數(shù)：18 Pages

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RF Power LDMOS Transistor

N--Channel Enhancement--Mode Lateral MOSFET This 50 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz. ? Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 1800 mA, Pout = 50 Watts Avg., Input Sign

文件：461.16 Kbytes 頁數(shù)：13 Pages

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N-Channel Enhancement-Mode Lateral MOSFET

Features ? Advanced high performance in--package Doherty ? Greater negative gate--source voltage range for improved Class C operation ? Designed for digital predistortion error correction systems

文件：254.82 Kbytes 頁數(shù)：8 Pages

恩XP

N-Channel Enhancement-Mode Lateral MOSFET

Features ? Advanced high performance in--package Doherty ? Greater negative gate--source voltage range for improved Class C operation ? Designed for digital predistortion error correction systems

文件：254.82 Kbytes 頁數(shù)：8 Pages

恩XP

RF Power LDMOS Transistor

N--Channel Enhancement--Mode Lateral MOSFET This 50 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz. ? Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 1800 mA, Pout = 50 Watts Avg., Input Sign

文件：461.16 Kbytes 頁數(shù)：13 Pages

恩XP

N-Channel Enhancement-Mode Lateral MOSFET

Features ? Advanced high performance in--package Doherty ? Greater negative gate--source voltage range for improved Class C operation ? Designed for digital predistortion error correction systems

文件：254.82 Kbytes 頁數(shù)：8 Pages

恩XP

N-Channel Enhancement-Mode Lateral MOSFET

Features ? Advanced high performance in--package Doherty ? Greater negative gate--source voltage range for improved Class C operation ? Designed for digital predistortion error correction systems

文件：254.82 Kbytes 頁數(shù)：8 Pages

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RF LDMOS Wideband Integrated Power Amplifiers

The A2I09VD030N wideband integrated circuit is designed with on?chip matching that makes it usable from 575 to 1300 MHz. This multi?stage structure is rated for 48 to 55 V operation and covers all typical cellular base station modulation formats. Features ? On?chip matching (50 ohm input, D

文件：491.92 Kbytes 頁數(shù)：23 Pages

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N-Channel Enhancement-Mode Lateral MOSFET

Features ? Advanced high performance in--package Doherty ? Greater negative gate--source voltage range for improved Class C operation ? Designed for digital predistortion error correction systems

文件：254.82 Kbytes 頁數(shù)：8 Pages

恩XP

N-Channel Enhancement-Mode Lateral MOSFET

Features ? Advanced high performance in--package Doherty ? Greater negative gate--source voltage range for improved Class C operation ? Designed for digital predistortion error correction systems

文件：254.82 Kbytes 頁數(shù)：8 Pages

恩XP