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首頁(yè) >AS4C4M4F1>規(guī)格書(shū)列表

型號(hào)	下載訂購(gòu)	功能描述	制造商上傳企業(yè)	LOGO
AS4C4M4F1	文件：274.56 Kbytes Page：18 Pages	5V 4M?4 CMOS DRAM (Fast Page mode) Functional description The AS4C4M4F0 and AS4C4M4F1 are high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) devices organized as 4,194,304 words × 4 bits. The devices are fabricated using advanced CMOS technology and innovative design techniques resulting in high speed, extremely 文件：274.56 Kbytes 頁(yè)數(shù)：18 Pages	ALSC	ALSC
AS4C4M4F1-50	文件：274.56 Kbytes Page：18 Pages	5V 4M?4 CMOS DRAM (Fast Page mode) Functional description The AS4C4M4F0 and AS4C4M4F1 are high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) devices organized as 4,194,304 words × 4 bits. The devices are fabricated using advanced CMOS technology and innovative design techniques resulting in high speed, extremely 文件：274.56 Kbytes 頁(yè)數(shù)：18 Pages	ALSC	ALSC
AS4C4M4F1-50JC	文件：274.56 Kbytes Page：18 Pages	5V 4M?4 CMOS DRAM (Fast Page mode) Functional description The AS4C4M4F0 and AS4C4M4F1 are high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) devices organized as 4,194,304 words × 4 bits. The devices are fabricated using advanced CMOS technology and innovative design techniques resulting in high speed, extremely 文件：274.56 Kbytes 頁(yè)數(shù)：18 Pages	ALSC	ALSC
AS4C4M4F1-50JI	文件：274.56 Kbytes Page：18 Pages	5V 4M?4 CMOS DRAM (Fast Page mode) Functional description The AS4C4M4F0 and AS4C4M4F1 are high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) devices organized as 4,194,304 words × 4 bits. The devices are fabricated using advanced CMOS technology and innovative design techniques resulting in high speed, extremely 文件：274.56 Kbytes 頁(yè)數(shù)：18 Pages	ALSC	ALSC
AS4C4M4F1-50TC	文件：274.56 Kbytes Page：18 Pages	5V 4M?4 CMOS DRAM (Fast Page mode) Functional description The AS4C4M4F0 and AS4C4M4F1 are high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) devices organized as 4,194,304 words × 4 bits. The devices are fabricated using advanced CMOS technology and innovative design techniques resulting in high speed, extremely 文件：274.56 Kbytes 頁(yè)數(shù)：18 Pages	ALSC	ALSC
AS4C4M4F1-50TI	文件：274.56 Kbytes Page：18 Pages	5V 4M?4 CMOS DRAM (Fast Page mode) Functional description The AS4C4M4F0 and AS4C4M4F1 are high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) devices organized as 4,194,304 words × 4 bits. The devices are fabricated using advanced CMOS technology and innovative design techniques resulting in high speed, extremely 文件：274.56 Kbytes 頁(yè)數(shù)：18 Pages	ALSC	ALSC
AS4C4M4F1-60	文件：274.56 Kbytes Page：18 Pages	5V 4M?4 CMOS DRAM (Fast Page mode) Functional description The AS4C4M4F0 and AS4C4M4F1 are high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) devices organized as 4,194,304 words × 4 bits. The devices are fabricated using advanced CMOS technology and innovative design techniques resulting in high speed, extremely 文件：274.56 Kbytes 頁(yè)數(shù)：18 Pages	ALSC	ALSC
AS4C4M4F1-60JC	文件：274.56 Kbytes Page：18 Pages	5V 4M?4 CMOS DRAM (Fast Page mode) Functional description The AS4C4M4F0 and AS4C4M4F1 are high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) devices organized as 4,194,304 words × 4 bits. The devices are fabricated using advanced CMOS technology and innovative design techniques resulting in high speed, extremely 文件：274.56 Kbytes 頁(yè)數(shù)：18 Pages	ALSC	ALSC
AS4C4M4F1-60JI	文件：274.56 Kbytes Page：18 Pages	5V 4M?4 CMOS DRAM (Fast Page mode) Functional description The AS4C4M4F0 and AS4C4M4F1 are high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) devices organized as 4,194,304 words × 4 bits. The devices are fabricated using advanced CMOS technology and innovative design techniques resulting in high speed, extremely 文件：274.56 Kbytes 頁(yè)數(shù)：18 Pages	ALSC	ALSC
AS4C4M4F1-60TC	文件：274.56 Kbytes Page：18 Pages	5V 4M?4 CMOS DRAM (Fast Page mode) Functional description The AS4C4M4F0 and AS4C4M4F1 are high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) devices organized as 4,194,304 words × 4 bits. The devices are fabricated using advanced CMOS technology and innovative design techniques resulting in high speed, extremely 文件：274.56 Kbytes 頁(yè)數(shù)：18 Pages	ALSC	ALSC

詳細(xì)參數(shù)

型號(hào)：
AS4C4M4F1
功能描述：
5V 4M x 4 CMOS DRAM(Fast Page mode)

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市壹芯創(chuàng)科技有限公司	AS4C4M4F1-60JC	ALIANCE	22+	原廠原封	8200	原裝現(xiàn)貨庫(kù)存.價(jià)格優(yōu)勢(shì)!!	詢價(jià)
深圳市振宏微科技有限公司	AS4C4M4F1Q-60JC	AllianceMemory	23+	NA	396	專做原裝正品,假一罰百!	詢價(jià)
深圳市華斯頓科技有限公司	AS4C4M4F1-60JC	ALLIANCE	25+23+	SOJ	38996	絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨	詢價(jià)
深圳市昊創(chuàng)電子有限公司	AS4C4M4F1-60JC	ALLIANCE	1824+	SOJ-26	3100	原裝現(xiàn)貨專業(yè)代理,可以代拷程序	詢價(jià)
上海市鑫鴻達(dá)電子	AS4C4M4F1-60JC	AllianceMemoryInc	2022+		300	全新原裝貨期兩周	詢價(jià)
標(biāo)準(zhǔn)國(guó)際(香港)有限公司	AS4C4M4F160JC	AS4C4M4F160JC	25+	3000	3000		詢價(jià)
貿(mào)澤芯城（深圳）電子科技有限公司	AS4C4M4F1-60JI	ALLANCE	23+	SOJ	6889	原廠授權(quán)代理,海外優(yōu)勢(shì)訂貨渠道。可提供大量庫(kù)存,詳	詢價(jià)
深圳市藍(lán)山航業(yè)科技有限公司	AS4C4M4F1-60JC	ALLIANCE	25+	SOJ	500000	行業(yè)低價(jià),代理渠道	詢價(jià)
深圳市安富世紀(jì)電子有限公司	AS4C4M4F1Q-60JCTR	ALLIANCE	23+	SOJ	7300	專注配單,只做原裝進(jìn)口現(xiàn)貨	詢價(jià)
深圳市河鋒鑫科技有限公司	AS4C512M16D3L12BCN	Alliance Memory Inc.	22+	96FBGA (14x9)	9000	原廠渠道,現(xiàn)貨配單	詢價(jià)

更多AS4C4M4F1供應(yīng)商更新時(shí)間2026-1-22 16:10:00

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