HYBRID - HIGH RELIABILITY RADIATION HARDENED DC-DC CONVERTER

文件：231.79 Kbytes 頁數(shù)：12 Pages

IRF

HYBRID - HIGH RELIABILITY RADIATION HARDENED DC/DC CONVERTER

文件：140.01 Kbytes 頁數(shù)：12 Pages

IRF

Power LDMOS transistor

General description Based on Advanced Rugged Technology (ART), this 2000 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 400 MHz. Features and benefits ? High

文件：1.69425 Mbytes 頁數(shù)：18 Pages

AMPLEON

安譜隆

Power LDMOS transistor

General description Based on Advanced Rugged Technology (ART), this 2000 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 400 MHz. Features and benefits ? High

文件：1.69425 Mbytes 頁數(shù)：18 Pages

AMPLEON

安譜隆

Power LDMOS transistor

General description Based on Advanced Rugged Technology (ART), this 2000 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 400 MHz. Features and benefits ? High

文件：1.69425 Mbytes 頁數(shù)：18 Pages

AMPLEON

安譜隆

Power LDMOS transistor

General description Based on Advanced Rugged Technology (ART), this 2000 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 400 MHz. Features and benefits ? High

文件：1.69425 Mbytes 頁數(shù)：18 Pages

AMPLEON

安譜隆

Power LDMOS transistor

Based on Advanced Rugged Technology (ART), this 2000 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 400 MHz. ? High breakdown voltage enables class E operation up to VDS = 53 V\n? Qualified up to a maximum of VDS = 65 V\n? Characterized from 30 V to 65 V to support a wide range of applications\n? Integrated dual sided ESD protection enables class C operation and complete switch off of the transistor\n? Exc;

Ampleon

安譜隆

Power LDMOS transistor

Based on Advanced Rugged Technology (ART), this 2000 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 400 MHz. ? High breakdown voltage enables class E operation up to VDS = 53 V\n? Qualified up to a maximum of VDS = 65 V\n? Characterized from 30 V to 65 V to support a wide range of applications\n? Integrated dual sided ESD protection enables class C operation and complete switch off of the transistor\n? Exc;

Ampleon

安譜隆

Power LDMOS transistor

Based on Advanced Rugged Technology (ART) a 2000 W LDMOS power transistor for ISM application has been designed. This unmatched device covers a frequency range of 1 MHz to 450 MHz. ? High breakdown voltage enables class E operation up to VDS = 50 V\n? Qualified up to a maximum of VDS = 65 V\n? Characterized from 30 V to 65 V for extended power range\n? Easy power control\n? Integrated dual sided ESD protection enables class C operation and complete switch off of the transistor;

Ampleon

安譜隆

Package：SOT-539AN；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：ART2K0FEG/SOT1248/REELDP

Ampleon USA Inc.