FAST RECOVERY DIODE

FAST RECOVERY DIODE FOR IGBT,IEGT,GCT APPLICATIONS SNUBBERLESS OPERATION LOW LOSSES SOFT RECOVERY Repetitive voltage up to 4500 V Mean forward current 1315 A Surge current 15 kA

文件：104.65 Kbytes 頁數(shù)：2 Pages

POSEICO

FAST RECOVERY DIODE

FAST RECOVERY DIODE FOR IGBT,IEGT,GCT APPLICATIONS SNUBBERLESS OPERATION LOW LOSSES SOFT RECOVERY Repetitive voltage up to 4500 V Mean forward current 1315 A Surge current 15 kA

文件：104.65 Kbytes 頁數(shù)：2 Pages

POSEICO

FAST RECOVERY DIODE

POSEICO

ATX with 12th/13th Generation Intel? Core? LGA1700 Socket Processors, TDP Max. 125W, DDR5 DRAM, Multiple Display Ports

Features ■ 12th/13th Generation Intel? Core? LGA1700 Socket Processors ■ DDR5 DRAM Support, 4000MHz, Max. 128GB ■ Four Independent Display: HDMI 2.0 x 2, DP x 2, VGA x 1 ■ Dual Intel? GbE (Optional: additional LAN 3 I225-LM x 1) ■ M.2 2280/2242 M-Key x 2, M.2 3042/3052 B-Key x 1 + Micro SIM

文件：702.17 Kbytes 頁數(shù)：2 Pages

AAEON

研揚(yáng)科技

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line

文件：87.96 Kbytes 頁數(shù)：6 Pages

STMICROELECTRONICS

意法半導(dǎo)體

Bandpass Filter

文件：362.62 Kbytes 頁數(shù)：3 Pages

MINI