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          首頁 >APT6011B2VR>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          APT6011B2VR

          Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

          POWER MOS V? Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. ? Iden

          文件:39.16 Kbytes 頁數(shù):2 Pages

          ADPOW

          APT6011B2VR

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current : ID= 49A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.11Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

          文件:337.37 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          APT6011B2VR

          Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

          文件:148.01 Kbytes 頁數(shù):4 Pages

          ADPOW

          APT6011B2VR_04

          Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

          文件:148.01 Kbytes 頁數(shù):4 Pages

          ADPOW

          APT6011B2VR

          MOSFET

          APT

          晶科電子

          APT6011B2VRG

          N-Channel MOSFET

          ROHS

          Microchip

          微芯科技

          詳細(xì)參數(shù)

          • 型號:

            APT6011B2VR

          • 制造商:

            ADPOW

          • 制造商全稱:

            Advanced Power Technology

          • 功能描述:

            Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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          十年配單,只做原裝
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          更多APT6011B2VR供應(yīng)商 更新時間2026-1-19 16:30:00
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