| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers exceptionally 文件：35.15 Kbytes 頁數(shù)：2 Pages | ADPOW | ADPOW | ||
POWER MOS V FREDFET Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. ? T-MAX? or TO-2 文件：117.93 Kbytes 頁數(shù)：4 Pages | ADPOW | ADPOW | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V? Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. ? Fast 文件：63.77 Kbytes 頁數(shù)：4 Pages | ADPOW | ADPOW | ||
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current :ID= 37A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high voltage, high speed power switching 文件：344.93 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS POWER MOS 7? Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TMby significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along w 文件：61.36 Kbytes 頁數(shù)：2 Pages | ADPOW | ADPOW | ||
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 文件：71.52 Kbytes 頁數(shù)：2 Pages | ADPOW | ADPOW | ||
POWER MOS 7 FREDFET 文件：166.74 Kbytes 頁數(shù)：5 Pages | ADPOW | ADPOW | ||
isc N-Channel MOSFET Transistor 文件：419.24 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
POWER MOS 7 FREDFET 文件：166.74 Kbytes 頁數(shù)：5 Pages | ADPOW | ADPOW | ||
isc N-Channel MOSFET Transistor 文件：419.24 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC |
詳細參數(shù)
- 型號：
APT5014
- 制造商：
ADPOW
- 制造商全稱：
Advanced Power Technology
- 功能描述：
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
APT |
23+ |
06 |
5000 |
原廠授權代理,海外優(yōu)勢訂貨渠道。可提供大量庫存,詳 |
詢價 | ||
APT |
24+ |
8866 |
詢價 | ||||
APT |
24+/25+ |
20 |
原裝正品現(xiàn)貨庫存價優(yōu) |
詢價 | |||
APT |
23+ |
TO-3PL |
5000 |
原裝正品,假一罰十 |
詢價 | ||
APT |
24+ |
TO-3P |
5000 |
全現(xiàn)原裝公司現(xiàn)貨 |
詢價 | ||
APT |
22+ |
原廠原封 |
8200 |
原裝現(xiàn)貨庫存.價格優(yōu)勢!! |
詢價 | ||
APT |
23+ |
TO-247 |
8650 |
受權代理!全新原裝現(xiàn)貨特價熱賣! |
詢價 | ||
APT |
23+ |
TO-3P |
5000 |
專做原裝正品,假一罰百! |
詢價 | ||
APTMICROSEMI |
18+ |
TO-264L |
41200 |
原裝正品,現(xiàn)貨特價 |
詢價 | ||
Microch |
20+ |
NA |
33560 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 |
相關規(guī)格書
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