N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

POWER MOS IV? SINGLE DIE ISOTOP? PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

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ADPOW

MOSFET N-CH 500V 43A ISOTOP

Microchip

微芯科技

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 42A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.12Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

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ISC

無錫固電

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V? Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. ? Fast

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N-CHANNEL MOSFET

N-CHANNEL MOSFET POWER MOS V? 500V 40A 0.120?

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MICROSEMI

美高森美