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首頁(yè) >APT20M22>規(guī)格書(shū)列表

型號(hào)	下載訂購(gòu)	功能描述	制造商上傳企業(yè)	LOGO
APT20M22	文件：70.92 Kbytes Page：4 Pages	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V? Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. ? Fast 文件：70.92 Kbytes 頁(yè)數(shù)：4 Pages	ADPOW	ADPOW
APT20M22	文件：300 bytes Page：1 Pages	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.	APT 晶科電子	APT
APT20M22B2VFR	文件：64.69 Kbytes Page：4 Pages	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V? FREDFET Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. 文件：64.69 Kbytes 頁(yè)數(shù)：4 Pages	ADPOW	ADPOW
APT20M22B2VR	文件：63.27 Kbytes Page：4 Pages	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V? Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. ? Fast 文件：63.27 Kbytes 頁(yè)數(shù)：4 Pages	ADPOW	ADPOW
APT20M22B2VR	文件：336.2 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 100A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.022Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, D 文件：336.2 Kbytes 頁(yè)數(shù)：2 Pages	ISC 無(wú)錫固電	ISC
APT20M22B2VRG	文件：370.42 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 100A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.022Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC- 文件：370.42 Kbytes 頁(yè)數(shù)：2 Pages	ISC 無(wú)錫固電	ISC
APT20M22JVFR	文件：73.22 Kbytes Page：4 Pages	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V? FREDFET Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. 文件：73.22 Kbytes 頁(yè)數(shù)：4 Pages	ADPOW	ADPOW
APT20M22JVR	文件：70.92 Kbytes Page：4 Pages	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V? Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. ? Fast 文件：70.92 Kbytes 頁(yè)數(shù)：4 Pages	ADPOW	ADPOW
APT20M22JVRU2	文件：695.16 Kbytes Page：2 Pages	ISOTOP Boost chopper MOSFET Power Module Features ? Power MOS V? MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic diode - Avalanche energy rated - Very rugged ? ISOTOP? Package (SOT-227) ? Very low stray inductance ? High level of integration Benefits ? Outstanding pe 文件：695.16 Kbytes 頁(yè)數(shù)：2 Pages	MICROSEMI 美高森美	MICROSEMI
APT20M22JVRU2	文件：719.78 Kbytes Page：7 Pages	ISOTOP Boost chopper MOSFET Power Module Features ? Power MOS V? MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic diode - Avalanche energy rated - Very rugged ? ISOTOP? Package (SOT-227) ? Very low stray inductance ? High level of integration Benefits ? Outstanding pe 文件：719.78 Kbytes 頁(yè)數(shù)：7 Pages	ADPOW	ADPOW

技術(shù)參數(shù)

Status：
In Production
Product Type：
Si Mosfet
VDSS (V)：
200
Current (A) Tc=80 C：
71
RDSon (mR) typ：
22
Silicon Type：
MOSFET
PKG：
SOT-227

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市壹芯創(chuàng)科技有限公司	APT20M22	APT	22+	原廠原封	8200	原裝現(xiàn)貨庫(kù)存.價(jià)格優(yōu)勢(shì)!!	詢價(jià)
深圳市毅創(chuàng)騰電子科技有限公司	APT20M22JVRU2	APT	23+	模塊	240	全新原裝正品,量大可訂貨!可開(kāi)17%增值票!價(jià)格優(yōu)勢(shì)!	詢價(jià)
深圳市一線半導(dǎo)體有限公司	APT20M22B2VFR	APT	24+	TO-247-3()	8866		詢價(jià)
深圳市勤思達(dá)科技有限公司	APT20M22LVR	APT	15+	TO-264	11560	全新原裝,現(xiàn)貨庫(kù)存,長(zhǎng)期供應(yīng)	詢價(jià)
齊創(chuàng)科技(上海,北京,青島)有限公司	APT20M22LVR	APT	23+	TO-3PL	5000	原裝正品,假一罰十	詢價(jià)
深圳市華斯頓科技有限公司	APT20M22LVR	APT原裝	25+23+	TO-264	24117	絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨	詢價(jià)
深圳市宇集芯電子有限公司	APT20M22JVRU2	Microsemi	25+	N/A	5600	正常排單原廠正規(guī)渠道保證原裝正品	詢價(jià)
中天科工半導(dǎo)體（深圳）有限公司	APT20M22LVFRG	Microch	20+	NA	33560	原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開(kāi)原型號(hào)增稅票	詢價(jià)
瀚佳科技(深圳)有限公司	APT20M22LVR	APT原裝	24+	TO-264	30980	原裝現(xiàn)貨/放心購(gòu)買	詢價(jià)
深圳市艾宇欣科技有限公司	APT20M22JVRU3	Microsemi	1942+	N/A	908	加我qq或微信，了解更多詳細(xì)信息,體驗(yàn)一站式購(gòu)物	詢價(jià)

更多APT20M22供應(yīng)商更新時(shí)間2026-1-20 10:16:00

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