Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.

Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers exceptionally

文件：35.76 Kbytes 頁數(shù)：2 Pages

ADPOW

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. ? Faster Switching

文件：69.1 Kbytes 頁數(shù)：4 Pages

ADPOW

CERAMIC DIELECTRIC TRIMMER CAPACITORS

文件：550.03 Kbytes 頁數(shù)：12 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

GPS L1 band SMT Antenna

文件：93.75 Kbytes 頁數(shù)：2 Pages

WPI